Enhanced ionized impurity scattering in nanowires

Journal of Applied Physics

Volumn 113, Issue 23, 2013, Pages

  Oh, Jung Hyun ^a   Lee, Seok Hee ^a   Shin, Mincheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED INTERFACES; DIELECTRIC MISMATCH; DOPANT ATOMS; IONIZED IMPURITY SCATTERING; SELF-CONSISTENT BORN APPROXIMATION; SI NANOWIRE; SILICON NANOWIRES;

IONIZATION; SCATTERING;

NANOWIRES;

EID: 84880845614     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811534     Document Type: Article

References (27)

1. R. Rurali, Rev. Mod. Phys. 82, 427 (2010). 10.1103/RevModPhys.82.427
2. C.-Y. Moon, W.-J. Lee, and K. J. Chang, Nano Lett. 8, 3086 (2008). 10.1021/nl8009878
3. M. V. Fernández-Serra, C. Adessi, and X. Blase, Phys. Rev. Lett. 96, 166805 (2006). 10.1103/PhysRevLett.96.166805
4. K.-H. Hong, J. Kim, J. H. Lee, J. Shin, and U.-I. Chung, Nano Lett. 10, 1671 (2010). 10.1021/nl904282v
5. D. R. Khanal, J. Yim, W. Walukiewicz, and J. Wu, Nano Lett. 7, 1186 (2007). 10.1021/nl062886w
6. G. Bryant, Phys. Rev. B 29, 6632 (1984). 10.1103/PhysRevB.29.6632
7. M. Diarra, Y.-M. Niquet, C. Delerue, and G. Allan, Phys. Rev. B 75, 045301 (2007). 10.1103/PhysRevB.75.045301
8. M. T. Björk, H. Schmid, J. Knoch, H. Riel, and W. Riess, Nat. Nanotechnol. 4, 103 (2009). 10.1038/nnano.2008.400
9. M. P. Persson, H. Mera, Y.-M. Niquet, C. Delerue, and M. Diarra, Phys. Rev. B 82, 115318 (2010). 10.1103/PhysRevB.82.115318
10. R. Rurali, T. Markussen, J. Sune, M. M. Brandbyge, and A.-P. Jauho, Nano Lett. 8, 2825 (2008). 10.1021/nl801409m
11. J. H. Oh, D. Ahn, Y. S. Yu, and S. W. Hwang, Phys. Rev. B 77, 035313 (2008). 10.1103/PhysRevB.77.035313
12. M. Bescond, M. Lannoo, L. Raymond, and F. Michelini, J. Appl. Phys. 107, 093703 (2010). 10.1063/1.3399999
13. E. A. Muljarov, E. A. Zhukov, V. S. Dneprovskii, and Y. Masumoto, Phys. Rev. B 62, 7420 (2000). 10.1103/PhysRevB.62.7420
14. A. Shik, J. Appl. Phys. 74, 2951 (1993). 10.1063/1.354601
15. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983). 10.1103/RevModPhys.55.645
16. E. B. Ramayya, D. Vasileska, S. M. Goodnick, and I. Knezevic, J. Appl. Phys. 104, 063711 (2008). 10.1063/1.2977758
17. A. Kamenev and A. Andreev, Phys. Rev. B 60, 2218 (1999). 10.1103/PhysRevB.60.2218
18. J. Mašek, Z. Phys. B: Condens. Matter 64, 145 (1986). 10.1007/BF01303695
19. S. Datta, Phys. Rev. B 45, 1347 (1992). 10.1103/PhysRevB.45.1347
20. J. R. Meyer and F. J. Bartoli, Phys. Rev. B 23, 5413 (1981). 10.1103/PhysRevB.23.5413
21. D. Chattopadhyay and H. J. Queisser, Rev. Mod. Phys. 53, 745 (1981). 10.1103/RevModPhys.53.745
22. M. Büttiker, Y. Imry, R. Landauer, and S. Pinhas, Phys. Rev. B 31, 6207 (1985). 10.1103/PhysRevB.31.6207
23. B.-K. Hu and S. DasSarma, Phys. Rev. B 48, 14388 (1993). 10.1103/PhysRevB.48.14388
24. S. Jin, M. V. Fiscetti, and T.-W. Tang, J. Appl. Phys. 102, 083715 (2007). 10.1063/1.2802586
25. A. Schenk, P. P. Altermatt, and B. Schmithüsen, in Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (2006), pp. 51-54.
26. Y. M. Niquet, A. Lherbier, N. H. Quang, M. V. Fernández-Serra, X. Blase, and C. Delerue, Phys. Rev. B 73, 165319 (2006). 10.1103/PhysRevB.73. 165319
27. V. Schmidt, S. Senz, and U. Gösele, Appl. Phys. A: Mater. Sci. 86, 187 (2007). 10.1007/s00339-006-3746-2