Failure of the scalar dielectric function approach for the screening modeling in double-gate SOI MOSFETs and in FinFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 3074-3083

  Toniutti, Paolo ^a   Esseni, David ^a   Palestri, Pierpaolo ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Dielectric function; electron transport; Monte Carlo; multi gate structures; screening modelling

Indexed keywords

CHANNEL INVERSION; DG MOSFETS; DIELECTRIC FUNCTIONS; DOUBLE-GATE; ELECTRON TRANSPORT; FINFETS; GATE STRUCTURE; MATRIX ELEMENTS; MONTE CARLO; MONTE CARLO SIMULATION; MOS TRANSISTORS; SCREENING EFFECT; SILICON-ON-INSULATOR MOSFETS; SIMPLIFYING ASSUMPTIONS; SIMULATION RESULT; SOI-MOSFETS; SUB-BANDS; SURFACE ROUGHNESS SCATTERING;

COMPUTER SIMULATION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GALERKIN METHODS; INTEGRATED CIRCUITS; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SURFACE PROPERTIES; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

SURFACE ROUGHNESS;

EID: 78049257807     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2068990     Document Type: Article

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