Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 82, Issue 19, 2003, Pages 3251-3253

  Gamiz F ^a   Roldan J B ^a   Carceller, J E ^a   Cartujo, P ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; FOURIER TRANSFORMS; IMPURITIES; MONTE CARLO METHODS; SEMICONDUCTING SILICON; TRANSISTORS;

REMOTE COULOMB SCATTERING (RCS);

ELECTRON MOBILITY;

EID: 0037981302     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1572967     Document Type: Article

References (11)

1. Y. Taur and T. H. King, Fundamentals of Modern VLSI devices (Cambridge University Press, New York, 1998).
2. M. S. Krishnan, L. Chang, T. King, J. Bokor, and C. Hu, Tech. Dig. - Int. Electron Devices Meet. 1999, 241 (1999).
3. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 47, 440 (2000).
4. S. Takagi and M. Takayanagi, Jpn. J. Appl. Phys., Part l 41, 2348 (2002).
5. S. Saito, K. Torii, M. Hiratani, and T. Onai, Appl. Phys. Lett. 81, 2391 (2002).
6. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).
7. F. Gamiz, J. A. López-Villanueva, J. A. Jiménez-Tejada, I. Melchor, and A. Palma, J. Appl. Phys. 75, 924 (1994).
8. F. Gámiz, J. A. López-Villanueva, J. Banqueri, Y. Ghailan, and J. E. Carceller, Semicond. Sci. Technol. 10, 592 (1994).
9. F. Gamiz, F. Jiménez-Molinos, J. B. Roldán, and P. Cartujo-Cassinello, Appl. Phys. Lett. 80, 3835 (2002).
10. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
11. T. H. Ning and C. T. Sah, Phys. Rev. B 6, 4605 (1972).