Error-free matthiessen's rule in the MOSFET universal mobility region

IEEE Transactions on Electron Devices

Volumn 60, Issue 2, 2013, Pages 753-758

  Chen, Ming Jer ^a   Lee, Wei Han ^a   Huang, Yi Hui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Matthiessen's rule; metal oxide semiconductor field effect transistors (MOSFETs); mobility; model; scattering; simulation; strain; universal mobility

Indexed keywords

BULK MOSFET; COULOMB SCATTERING; INDIVIDUAL MOBILITY; MATTHIESSEN'S RULE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY REGION; MOS-FET; N-CHANNEL; RELATIVE STRENGTH; REMOTE SCATTERING; SEMIEMPIRICAL MODELS; SIMULATION; SUBBANDS; SUBSTRATE DOPING;

CARRIER MOBILITY; COMPUTER SIMULATION; INVERSION LAYERS; MODELS; SCATTERING; SEMICONDUCTOR DOPING; STRAIN;

MOSFET DEVICES;

EID: 84872837453     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2233202     Document Type: Article

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