Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Cavassilas, Nicolas ^a   Michelini, Fabienne ^a   Bescond, Marc ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE-GATE; DOUBLE-GATE TRANSISTOR; GROUP VELOCITIES; MEAN-FREE PATH; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; MULTIBAND; NONEQUILIBRIUM GREEN FUNCTION FORMALISMS; ON CURRENTS; P-TYPE; PHONON INTERACTIONS; QUANTUM TRANSPORT SIMULATIONS; SCATTERING MECHANISMS; SELF-CONSISTENT BORN APPROXIMATION;

BORN APPROXIMATION; GERMANIUM; PHONONS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; TRANSISTORS;

SEMICONDUCTING SILICON;

EID: 79955400482     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3556457     Document Type: Conference Paper

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