Fully atomistic simulations of phonon-limited mobility of electrons and holes in 〈001〉-, 〈 110〉-, and 〈111〉 -Oriented Si nanowires

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1480-1487

  Niquet, Yann Michel ^a   Delerue, Christophe ^b   Rideau, Denis ^c   Videau, Brice ^a  

^a UNIV GRENOBLE ALPES   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Electron phonon scattering; mobility; nanowire (NW); simulation; tight binding (TB); valence force field

Indexed keywords

ATOMISTIC SIMULATIONS; ELECTRON PHONON SCATTERING; ELECTRONS AND HOLES; LOW FIELD MOBILITY; MOBILITIES OF ELECTRON; SI NANOWIRE; SIMULATION; TIGHT BINDING; TIGHT BINDING MODEL; VALENCE-FORCE FIELD; VALENCE-FORCE FIELD MODEL;

BOLTZMANN EQUATION; CARRIER MOBILITY; ELECTRON DIFFRACTION; ELECTRON MOBILITY; ELECTRON SCATTERING; NANOWIRES; SILICON;

PHONONS;

EID: 84860257068     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2187788     Document Type: Article

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