SCOPUS 정보 검색 플랫폼

Volumn 112, Issue 3, 2012, Pages

On the origin of the mobility reduction in n- and p-metal-oxide- semiconductor field effect transistors with hafnium-based/metal gate stacks

(6) Toniutti, P a Palestri, P a Esseni, D a Driussi, F a De Michielis, M a,b Selmi, L a

a UNIVERSITY OF UDINE (Italy)

b LABORATORIO MDM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERING; DIPOLE DENSITY; EXPERIMENTAL DATA; GATE STACKS; MOBILITY REDUCTION; MODEL ASSUMPTIONS; MONTE CARLO SIMULATION; MOSFETS; P-MOSFETS; PHYSICAL MECHANISM; PROCESS TECHNOLOGIES; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SINGLE LAYER; SOFT-OPTICAL PHONONS; THRESHOLD VOLTAGE SHIFTS;

DIELECTRIC MATERIALS; HAFNIUM; LOGIC GATES; MONTE CARLO METHODS; MOSFET DEVICES;

HOLE MOBILITY;

EID: 84865207191 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4737781 Document Type: Article

Times cited : (36)

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