SCOPUS 정보 검색 플랫폼

Volumn 110, Issue 9, 2011, Pages

Non-equilibrium Green's function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

(3) Aldegunde, M a Martinez, A b,c Asenov, A c

a Centro de Supercomputacion de Galicia (Spain)

b SWANSEA UNIVERSITY (United Kingdom)

c UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICITY; CHANNEL LENGTH; CROSS SECTION; DEVICE CHARACTERISTICS; DRAIN BIAS; EFFECTIVE MASS APPROXIMATION; ELECTRON CURRENTS; ELECTRON PHONON SCATTERING; GATE VOLTAGES; NON-EQUILIBRIUM GREEN'S FUNCTION; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; SHORT CHANNELS; SI NANOWIRE; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS;

BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; GREEN'S FUNCTION; NANOWIRES; PHONON SCATTERING; PHONONS;

FIELD EFFECT TRANSISTORS;

EID: 81355142770 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3658856 Document Type: Article

Times cited : (38)

References (29)

1
- 65549093343
- http://www.itrs.net/for
- See http://www.itrs.net/for International Technology Roadmap for Semiconductors..
- International Technology Roadmap for Semiconductors

2
- 51949092967
- IEEE, Piscataway, NJ 37
- T. Y. Liow, K. M. Tan, R. T. P. Lee, M. Zhu, B. L.-H. L.-H. Tan, G. S. Samudra, N. Balasubramanian, and Y. C. Yeo, in 2008 Symposium on VLSI Technology (IEEE, Piscataway, NJ, 2008), pp. 36 and 37.
- (2008) 2008 Symposium on VLSI Technology , pp. 36
- Liow, T.Y.¹ Tan, K.M.² Lee, R.T.P.³ Zhu, M.⁴ Tan, B.L.-H.L.-H.⁵ Samudra, G.S.⁶ Balasubramanian, N.⁷ Yeo, Y.C.⁸

3
- 51949108926
- IEEE, New York
- S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Yeo, K. H. Cho, I. K. Ku, H. Cho, W. Jang, D.-W. Kim, D. Park, and W.-S. Lee, in 2007 IEEE International Electron Devices Meeting (IEEE, New York, 2007), pp. 891-894.
- (2007) 2007 IEEE International Electron Devices Meeting , pp. 891-894
- Suk, S.D.¹ Li, M.² Yeoh, Y.Y.³ Yeo, K.H.⁴ Cho, K.H.⁵ Ku, I.K.⁶ Cho, H.⁷ Jang, W.⁸ Kim, D.-W.⁹ Park, D.¹⁰ Lee, W.-S.¹¹

4
- 81355140194
- IEEE, Piscataway, NJ
- A. Martinez, N. Seoane, A. R. Brown, and A. Asenov, in 2010 Silicon Nanoelectronics Workshop (IEEE, Piscataway, NJ, 2010), pp. 1-2.
- (2010) 2010 Silicon Nanoelectronics Worksho , pp. 1-2
- Martinez, A.¹ Seoane, N.² Brown, A.R.³ Asenov, A.⁴

5
- 70350584509
- 10.1109/LED.2009.2031418
- S. Poli and M. Pala, IEEE Electron Device Lett. 30, 1212 (2009). 10.1109/LED.2009.2031418
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1212
- Poli, S.¹ Pala, M.²

6
- 67651163764
- 10.1088/0957-4484/20/29/295202
- K. Rogdakis, S. Poli, E. Bano, K. Zekentes, and M. G. Pala, Nanotechnology 20, 295202 (2009). 10.1088/0957-4484/20/29/295202
- (2009) Nanotechnology , vol.20 , pp. 295202
- Rogdakis, K.¹ Poli, S.² Bano, E.³ Zekentes, K.⁴ Pala, M.G.⁵

7
- 49249122744
- 10.1109/TED.2008.926230
- M. Lenzi, P. Palestri, E. Gnani, S. Reggiani, A. Gnudi, D. Esseni, L. Selmi, and G. Baccarani, IEEE Trans. Electron Devices 55, 2086 (2008). 10.1109/TED.2008.926230
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2086
- Lenzi, M.¹ Palestri, P.² Gnani, E.³ Reggiani, S.⁴ Gnudi, A.⁵ Esseni, D.⁶ Selmi, L.⁷ Baccarani, G.⁸

8
- 84893264597
- 10.1063/1.2802586
- S. Jin, M. V. Fischetti, and T.-w. Tang, J. Appl. Phys. 102, 083715 (2007). 10.1063/1.2802586
- (2007) J. Appl. Phys. , vol.102 , pp. 083715
- Jin, S.¹ Fischetti, M.V.² Tang, T.-W.³

9
- 33745711573
- A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions
- DOI 10.1063/1.2206885
- S. Jin, Y. J. Park, and H. S. Min, J. Appl. Phys. 99, 123719 (2006). 10.1063/1.2206885 (Pubitemid 44000417)
- (2006) Journal of Applied Physics , vol.99 , Issue.12 , pp. 123719
- Jin, S.¹ Park, Y.J.² Min, H.S.³

10
- 72449156756
- 10.1103/PhysRevB.80.155430
- M. Luisier and G. Klimeck, Phys. Rev. B 80, 155430 (2009). 10.1103/PhysRevB.80.155430
- (2009) Phys. Rev. B , vol.80 , pp. 155430
- Luisier, M.¹ Klimeck, G.²

11
- 77957567360
- 10.1103/PhysRevB.82.115319
- W. Zhang, C. Delerue, Y.-M. Niquet, G. Allan, and E. Wang, Phys. Rev. B 82, 115319 (2010). 10.1103/PhysRevB.82.115319
- (2010) Phys. Rev. B , vol.82 , pp. 115319
- Zhang, W.¹ Delerue, C.² Niquet, Y.-M.³ Allan, G.⁴ Wang, E.⁵

12
- 0003409205
- (Cambridge University Press, Cambridge)
- S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1997), p. 393.
- (1997) Electronic Transport in Mesoscopic Systems , pp. 393
- Datta, S.¹

13
- 38849209164
- A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs
- DOI 10.1109/TED.2007.902867
- A. Martinez, M. Bescond, J. Barker, A. Svizhenko, M. Anantram, C. Millar, and A. Asenov, IEEE Trans. Electron Devices 54, 2213 (2007). 10.1109/TED.2007.902867 (Pubitemid 351485739)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.9 , pp. 2213-2222
- Martinez, A.¹ Bescond, M.² Barker, J.R.³ Svizhenko, A.⁴ Anantram, M.P.⁵ Millar, C.⁶ Asenov, A.⁷

14
- 4244177773
- 10.1103/PhysRevB.45.6670
- R. Lake and S. Datta, Phys. Rev. B 45, 6670 (1992). 10.1103/PhysRevB.45. 6670
- (1992) Phys. Rev. B , vol.45 , pp. 6670
- Lake, R.¹ Datta, S.²

15
- 0043033158
- 10.1109/TED.2003.813503
- A. Svizhenko and M. Anantram, IEEE Trans. Electron Devices 50, 1459 (2003). 10.1109/TED.2003.813503
- (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1459
- Svizhenko, A.¹ Anantram, M.²

16
- 33748300947
- Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism
- DOI 10.1063/1.2244522
- M. Luisier, A. Schenk, and W. Fichtner, J. Appl. Phys. 100, 043713 (2006). 10.1063/1.2244522 (Pubitemid 44327275)
- (2006) Journal of Applied Physics , vol.100 , Issue.4 , pp. 043713
- Luisier, M.¹ Schenk, A.² Fichtner, W.³

17
- 33646498298
- 10.1016/j.sse.2006.03.041
- K. Nehari, N. Cavassilas, J. Autran, M. Bescond, D. Munteanu, and M. Lannoo, Solid-State Electron. 50, 716 (2006). 10.1016/j.sse.2006.03.041
- (2006) Solid-State Electron. , vol.50 , pp. 716
- Nehari, K.¹ Cavassilas, N.² Autran, J.³ Bescond, M.⁴ Munteanu, D.⁵ Lannoo, M.⁶

18
- 21844436489
- 10.1016/0370-1573(87)90004-4
- G. Mahan, Phys. Rep., Rev. Phys. Lett. 145, 251 (1987). 10.1016/0370-1573(87)90004-4
- (1987) Phys. Rep., Rev. Phys. Lett. , vol.145 , pp. 251
- Mahan, G.¹

19
- 0009253354
- A. Migdal, J. Exp. Theor. Phys. 34, 996 (1958).
- (1958) J. Exp. Theor. Phys. , vol.34 , pp. 996
- Migdal, A.¹

20
- 25344445386
- 10.1103/PhysRev.131.993
- S. Engelsberg and J. Schrieffer, Phys. Rev. 131, 993 (1963). 10.1103/PhysRev.131.993
- (1963) Phys. Rev. , vol.131 , pp. 993
- Engelsberg, S.¹ Schrieffer, J.²

21
- 56549083690
- 10.1109/TED.2008.2005163
- B. Yu, L. Wang, Y. Yuan, P. M. Asbeck, and Y. Taur, IEEE Trans. Electron Devices 55, 2846 (2008). 10.1109/TED.2008.2005163
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2846
- Yu, B.¹ Wang, L.² Yuan, Y.³ Asbeck, P.M.⁴ Taur, Y.⁵

22
- 3142715886
- 10.1063/1.1762695
- R. Kotlyar, B. Obradovic, P. Matagne, M. Stettler, and M. D. Giles, Appl. Phys. Lett. 84, 5270 (2004). 10.1063/1.1762695
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5270
- Kotlyar, R.¹ Obradovic, B.² Matagne, P.³ Stettler, M.⁴ Giles, M.D.⁵

23
- 0036928734
- (IEEE, Piscataway, NJ)
- K. Rim, S. Narasimha, M. Longstreet, A. Mocuta, and J. Cai, in International Electron Devices Meeting (IEEE, Piscataway, NJ, 2002), pp. 43-46.
- (2002) International Electron Devices Meeting , pp. 43-46
- Rim, K.¹ Narasimha, S.² Longstreet, M.³ Mocuta, A.⁴ Cai, J.⁵

24
- 8444244370
- 10.1103/PhysRevB.44.6538
- S. Datta and R. Lake, Phys. Rev. B 44, 6538 (1991). 10.1103/PhysRevB.44. 6538
- (1991) Phys. Rev. B , vol.44 , pp. 6538
- Datta, S.¹ Lake, R.²

25
- 0005250388
- 10.1103/PhysRevB.46.4757
- R. Lake and S. Datta, Phys. Rev. B 46, 4757 (1992). 10.1103/PhysRevB.46. 4757
- (1992) Phys. Rev. B , vol.46 , pp. 4757
- Lake, R.¹ Datta, S.²

26
- 35949006143
- 10.1103/PhysRevB.47.16631
- L. Hicks and M. Dresselhaus, Phys. Rev. B 47, 16631 (1993). 10.1103/PhysRevB.47.16631
- (1993) Phys. Rev. B , vol.47 , pp. 16631
- Hicks, L.¹ Dresselhaus, M.²

27
- 75749116799
- 10.1063/1.3291120
- C. Jeong, R. Kim, M. Luisier, S. Datta, and M. Lundstrom, J. Appl. Phys. 107, 023707 (2010). 10.1063/1.3291120
- (2010) J. Appl. Phys. , vol.107 , pp. 023707
- Jeong, C.¹ Kim, R.² Luisier, M.³ Datta, S.⁴ Lundstrom, M.⁵

28
- 38049148246
- 10.1038/nature06458
- A. I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J.-K. Yu, W. A. Goddard III, and J. R. Heath, Nature 451, 168 (2008). 10.1038/nature06458
- (2008) Nature , vol.451 , pp. 168
- Boukai, A.I.¹ Bunimovich, Y.² Tahir-Kheli, J.³ Yu, J.-K.⁴ Ager III, J.W.⁵ Heath, J.R.⁶

29
- 67650127116
- 10.1109/TED.2009.2021357
- N. Seoane, A. Martinez, A. Brown, J. Barker, and A. Asenov, IEEE Trans. Electron Devices 56, 1388 (2009). 10.1109/TED.2009.2021357
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 1388
- Seoane, N.¹ Martinez, A.² Brown, A.³ Barker, J.⁴ Asenov, A.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.