Physically Based Modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2445-2455

  Esseni, David ^a   Abramo, Antonio ^a   Selmi, Luca ^a   Sangiorgi, Enrico ^b  

^a UNIVERSITY OF UDINE   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Mobility modeling; Scattering mechanisms; Silicon thickness fluctuations; SOI MOSFETs; Ultrathin silicon thicknesses

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; INTEGRAL EQUATIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHONONS; ULTRATHIN FILMS;

ELASTIC ACOUSTIC PHONON SCATTERING; MOBILITY MODELING; SURFACE OPTICAL (SO) PHONONS;

MOSFET DEVICES;

EID: 0347968246     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819256     Document Type: Article

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