Full quantum treatment of remote Coulomb scattering in silicon nanowire FETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1191-1198

  Poli, Stefano ^a   Pala, Marco G ^b   Poiroux, Thierry ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b IMEP LAHC   (France)

^c CEA GRENOBLE   (France)

Author keywords

Effective mobility; Electric potential; Impurities; Logic gates; non equilibrium Green's function (NEGF); Performance evaluation; Quasi ballistic transport; Remote Coulomb scattering (RCS); Scattering; Silicon; Silicon nanowire (Si NW); Transfer characteristics; Tunneling

Indexed keywords

EFFECTIVE MOBILITY; NON-EQUILIBRIUM GREEN'S FUNCTION (NEGF); PERFORMANCE EVALUATION; QUASI-BALLISTIC TRANSPORT; REMOTE COULOMB SCATTERING (RCS); SILICON NANOWIRE (SI-NW); TRANSFER CHARACTERISTICS; TUNNELING;

BALLISTICS; DIFFERENTIAL EQUATIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; LOGIC GATES; MESFET DEVICES; NANOWIRES; POISSON EQUATION; SCATTERING; TRANSPORT PROPERTIES; TUNNELING (EXCAVATION);

SILICON;

EID: 67349258645     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019380     Document Type: Article

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