Emission and absorption of optical phonons in multigate silicon nanowire MOSFETs

Journal of Computational Electronics

Volumn 11, Issue 3, 2012, Pages 249-265

  Akhavan, Nima Dehdashti ^a,b   Ferain, Isabelle ^b   Yu, Ran ^b   Razavi, Pedram ^b   Colinge, Jean Pierre ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Device simulation; Electron phonon scattering; Impurity scattering; Multigate silicon nanowire transistor; Non equilibrium Green's function (NEGF); Quantum transport; Random dopant fluctuation

Indexed keywords

DEVICE SIMULATIONS; ELECTRON PHONON SCATTERING; IMPURITY SCATTERING; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM TRANSPORT; RANDOM DOPANT FLUCTUATION; SILICON NANOWIRE TRANSISTORS;

ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; ELECTRON SCATTERING; NANOWIRES; PHONONS; QUANTUM ELECTRONICS; SILICON; THREE DIMENSIONAL;

CRYSTAL ATOMIC STRUCTURE;

EID: 84870892752     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-012-0411-1     Document Type: Conference Paper

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