Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films

Journal of Applied Physics

Volumn 113, Issue 4, 2013, Pages

  Lajn, Alexander ^a   Von Wenckstern, Holger ^a   Grundmann, Marius ^a   Wagner, Gerald ^a   Barquinha, Pedro ^b   Fortunato, Elvira ^b   Martins, Rodrigo ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS THIN FILMS; BARRIER DISTRIBUTIONS; BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; BULK ZNO; CAPACITANCE VOLTAGE MEASUREMENTS; COMPARATIVE STUDIES; CRYSTALLINITIES; CURRENT VOLTAGE; DIFFUSION THEORY; DOPING DENSITIES; GAINZNO; GAUSSIANS; HETEROEPITAXIAL; II-IV SEMICONDUCTORS; LITERATURE DATA; RECTIFICATION PROPERTIES; SCHOTTKY DIODES; SEMICONDUCTING OXIDE; SINGLE-CRYSTALLINE; TEMPERATURE DEPENDENT; TRANSPORT MECHANISM; VISIBLE SPECTRAL RANGE; ZNO THIN FILM;

EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; THERMIONIC EMISSION; ZINC OXIDE;

ELECTRIC RECTIFIERS;

EID: 84873660230     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789000     Document Type: Article

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