Microscopic identification of hot spots in multibarrier schottky contacts on pulsed laser deposition grown zinc oxide thin films

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 536-541

  Müller, Stefan ^a   Von Wenckstern, Holger ^a   Breitenstein, Otwin ^b   Lenzner, Jörg ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Barrier inhomogeneities; dark lock in thermography (DLIT); energy dispersive X ray spectroscopy; reactive sputtering; Schottky barrier; thin film; zinc oxide (ZnO)

Indexed keywords

ACTIVE AREA; BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; BARRIER POTENTIAL; DARK LOCK-IN THERMOGRAPHY (DLIT); ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FORWARD CURRENTS; HOT SPOT; IDEALITY FACTORS; IV CHARACTERISTICS; LOCKIN THERMOGRAPHY; MICROMETER SCALE; MICROSCOPIC IDENTIFICATION; MULTIPLE BARRIER; PARALLEL-CONNECTED; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; THIN-FILM PROPERTIES; ZINC OXIDE THIN FILMS;

ENERGY DISPERSIVE SPECTROSCOPY; PULSED LASER DEPOSITION; REACTIVE SPUTTERING; SCHOTTKY BARRIER DIODES; THERMOGRAPHY (TEMPERATURE MEASUREMENT); THIN FILMS;

ZINC OXIDE;

EID: 84857647467     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2177984     Document Type: Article

References (35)

1. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, "ZnO Schottky ultraviolet photodetectors," J. Cryst. Growth, vol. 225, no. 2, pp. 110-113, May 2001. (Pubitemid 32496059)
2. F. D. Auret, S. A. Goodman, M. J. Legodi, W. E. Meyer, and D. C. Look, "Electrical characterization of vapor-phase-grown single-crystal ZnO," Appl. Phys. Lett., vol. 80, no. 8, pp. 1340-1342, Feb. 2002.
3. B. J. Coppa, R. F. Davis, and R. J. Nemanich, "Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001-bar)," Appl. Phys. Lett., vol. 82, no. 3, pp. 400-402, Jan. 2003.
4. H. von Wenckstern, E. M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, and M. Grundmann, "Lateral homogeneity of Schottky contacts on n-type ZnO," Appl. Phys. Lett., vol. 84, no. 1, pp. 79-81, Jan. 2004.
5. U. Grossner, S. Gabrielsen, T. M. Borseth, J. Grillenberger, A. Y. Kuznetsov, and B. G. Svensson, "Palladium Schottky barrier contacts to hydrothermally grown n-ZnO and shallow electron states," Appl. Phys. Lett., vol. 85, no. 12, pp. 2259-2261, Sep. 2004.
6. K. Ip, B. P. Gila, A. H. Onstine, E. S. Lambers, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, S. Kim, J. R. LaRoche, and F. Ren, "Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning," Appl. Phys. Lett., vol. 84, no. 25, pp. 5133-5135, Jun. 2004.
7. T. Lin, S. Chang, Y. Su, B. Huang, M. Fujita, and Y. Horikoshi, "ZnO MSM photodetectors with Ru contact electrodes," J. Cryst. Growth, vol. 281, no. 2-4, pp. 513-517, Aug. 2005. (Pubitemid 40973278)
8. H. L. Mosbacker, Y. M. Strzhemechny, B. D. White, P. E. Smith, D. C. Look, D. C. Reynolds, C. W. Litton, and L. J. Brillson, "Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO," Appl. Phys. Lett., vol. 87, no. 1, pp. 012102-1-012102-3, Jul. 2005.
9. S.-H. Kim, H.-K. Kim, and T.-Y. Seong, "Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO," Appl. Phys. Lett., vol. 86, no. 2, pp. 022101-1-022101-3, Jan. 2005. (Pubitemid 40211650)
10. S.-H. Kim, H.-K. Kim, and T.-Y. Seong, "Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO," Appl. Phys. Lett., vol. 86, no. 11, pp. 112101-1-112101-3, Mar. 2005.
11. J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno, and M. Kawasaki, "High-mobility field-effect transistors based on single-crystalline ZnO channels," Jpn. J. Appl. Phys., vol. 44, no. 38, pp. L1193-L1195, Sep. 2005. (Pubitemid 43200671)
12. S.-H. Kim, H.-K. Kim, S.-W. Jeong, and T.-Y. Seong, "Characteristics of Pt Schottky contacts on hydrogen peroxide-treated n-type ZnO(0001) layers," Superlatt. Microstruct., vol. 39, no. 1-4, pp. 211-217, Jan.- Apr. 2006. (Pubitemid 43005137)
13. H. von Wenckstern, G. Biehne, R. A. Rahman, H. Hochmuth, M. Lorenz, and M. Grundmann, "Mean barrier height of Pd Schottky contacts on ZnO thin films," Appl. Phys. Lett., vol. 88, no. 9, pp. 092102-1-092102-3, Feb. 2006.
14. M. W. Allen, M. M. Alkaisi, and S. M. Durbin, "Metal Schottky diodes on Zn-polar and O-polar bulk ZnO," Appl. Phys. Lett., vol. 89, no. 10, pp. 103520-1-103520-3, Sep. 2006.
15. M. W. Allen, S. M. Durbin, and J. B. Metson, "Silver oxide Schottky contacts on n-type ZnO," Appl. Phys. Lett., vol. 91, no. 5, pp. 053512-1-053512-3, Jul. 2007.
16. L. J. Brillson, H. L. Mosbacker, M. J. Hetzer, Y. Strzhemechny, G. H. Jessen, D. C. Look, G. Cantwell, J. Zhang, and J. J. Song, "Dominant effect of near-interface native point defects on ZnO Schottky barriers," Appl. Phys. Lett., vol. 90, no. 10, pp. 102116-1-102116-3, Mar. 2007.
17. R. Schifano, E. V. Monakhov, U. Grossner, and B. G. Svensson, "Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO," Appl. Phys. Lett., vol. 91, no. 19, pp. 193507-1-193507-3, Nov. 2007.
18. H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. Durbin, "Defects in hydrothermally grown bulk ZnO," Appl. Phys. Lett., vol. 91, no. 2, pp. 022913-1-022913-3, Jul. 2007.
19. M. Nakano, T. Makino, A. Tsukazaki, K. Ueno, A. Ohtomo, T. Fukumura, H. Yuji, S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, and M. Kawasaki, "Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO," Appl. Phys. Lett., vol. 93, no. 12, pp. 123309-1-123309-3, Sep. 2008.
20. H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann, "ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates," Appl. Phys. Lett., vol. 92, no. 19, pp. 192108-1-192108-3, May 2008.
21. Y. Dong, Z.-Q. Fang, D. C. Look, G. Cantwell, J. Zhang, J. J. Song, and L. J. Brillson, "Zn- and O-face polarity effects at ZnO surfaces and metal interfaces," Appl. Phys. Lett., vol. 93, no. 7, pp. 072111-1-072111-3, Aug. 2008.
22. M. W. Allen, R. J. Mendelsberg, R. J. Reeves, and S. M. Durbin, "Oxidized noble metal Schottky contacts to n-type ZnO," Appl. Phys. Lett., vol. 94, no. 10, pp. 103508-1-103508-3, Mar. 2009.
23. H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Z. Zhang, and M. Grundmann, "Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits," Advanced Materials, vol. 22, no. 47, pp. 5332-5349, Dec. 2010.
24. A. Lajn, M. Schmidt, H. von Wenckstern, and M. Grundmann, "Transparent rectifying contacts for visible-blind ultraviolet photodiodes based on ZnO," J. Electron. Mater., vol. 40, no. 4, pp. 473-476, Apr. 2011.
25. Z. Zhang, H. von Wenckstern, M. Schmidt, and M. Grundmann, "Wavelength selective metal-semiconductor-metal photodetectors based on (Mg, Zn)O-heterostructures," Appl. Phys. Lett., vol. 99, no. 8, pp. 083502-1-083502-3, Aug. 2011.
26. D. Defives, O. Noblanc, C. Dua, C. Brylinski, M. Barthula, V. Aubry-Fortuna, and F. Meyer, "Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers," IEEE Trans. Electron Devices, vol. 46, no. 3, pp. 449-455, Mar. 1999.
27. B. Skromme, E. Luckowski, K. Moore, M. Bhatnagar, C. Weitzel, T. Gehoski, and D. Ganser, "Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity," J. Electron. Mater., vol. 29, no. 3, pp. 376-383, Mar. 2000. (Pubitemid 30585467)
28. Y. Wang, G. N. Ali, M. K. Mikhov, V. Vaidyanathan, B. J. Skromme, B. Raghothamachar, and M. Dudley, "Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes," J. Appl. Phys., vol. 97, no. 1, pp. 013540-1-013540-10, Jan. 2005. (Pubitemid 40191790)
29. S. Tumakha, D. J. Ewing, L. M. Porter, Q. Wahab, X. Ma, T. S. Sudharshan, and L. J. Brillson, "Defect-driven inhomogeneities in Ni/4H-SiC Schottky barriers," Appl. Phys. Lett., vol. 87, no. 24, pp. 242106-1-242106-3, Dec. 2005.
30. D. J. Ewing, L. M. Porter, Q. Wahab, X. Ma, T. S. Sudharshan, S. Tumakha, M. Gao, and L. J. Brillson, "Inhomogeneities in Ni/4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states," J. Appl. Phys., vol. 101, no. 11, pp. 114514-1-114514-10, Jun. 2007.
31. A. Lajn, H. V. Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, and R. Denecke, "Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO," J. Vac. Sci. Technol., B, vol. 27, no. 3, pp. 1769-1773, May 2009.
32. J. H. Werner and H. H. Güttler, "Barrier inhomogeneities at Schottky contacts," J. Appl. Phys., vol. 69, no. 3, pp. 1522-1533, Feb. 1991.
33. R. T. Tung, "Electron transport at metal-semiconductor interfaces: General theory," Phys. Rev. B, vol. 45, no. 23, pp. 13 509-13 523, Jun. 1992.
34. R. Schmitsdorf and W. Mönch, "Influence of the interface structure on the barrier height of homogeneous Pb/n-Si(111) Schottky contacts," Eur. Phys. J. B, vol. 7, no. 3, pp. 457-466, Feb. 1999. (Pubitemid 129558497)
35. O. Breitenstein, W. Warta, and M. Langenkamp, Lock-in Thermography- Basics and Use for Evaluating Electronic Devices and Materials. Berlin, Germany: Springer-Verlag, 2010.