SCOPUS 정보 검색 플랫폼

Volumn 40, Issue 4, 2011, Pages 473-476

Erratum: Transparent rectifying contacts for visible-blind ultraviolet photodiodes based on ZnO (Journal of Electronic Materials DOI: 10.1007/s11664-010-1395-x);Transparent rectifying contacts for visible-blind ultraviolet photodiodes based on ZnO

(4) Lajn, A a Schmidt, M a Von Wenckstern, H a Grundmann, M a

a UNIVERSITY OF LEIPZIG (Germany)

Author keywords

Schottky; UV photodetector; ZnO

Indexed keywords

II-VI SEMICONDUCTORS; REACTIVE SPUTTERING; SILICON CARBIDE; ZINC OXIDE;

CURRENT VOLTAGE; EFFECTIVE BARRIER HEIGHTS; EXTERNAL QUANTUM EFFICIENCY; PHOTOVOLTAIC MODES; SCHOTTKY; UV PHOTODETECTORS; VISIBLE BLIND;

CONTACTS (FLUID MECHANICS);

EID: 79952196353 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1566-4 Document Type: Erratum

Times cited : (8)

References (19)

1
- 0039560342
- R.T. Azuma 1997 Presence: Teleoperators and Virtual Environments 6 355
- (1997) Presence: Teleoperators and Virtual Environments , vol.6 , pp. 355
- Azuma, R.T.¹

2
- 0038362743
- Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
- DOI 10.1126/science.1083212
- K. Nomura H. Ohta K. Ueda T. Kamiya M. Hirano H. Hosono 2003 Science 300 1269 10.1126/science.1083212 1:CAS:528:DC%2BD3sXktFGktrg%3D (Pubitemid 36621429)
- (2003) Science , vol.300 , Issue.5623 , pp. 1269-1272
- Nomura, K.¹ Ohta, H.² Ueda, K.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

3
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura H. Ohta A. Takagi T. Kamiya M. Hirano H. Hosono 2004 Nature 432 488 10.1038/nature03090 1:CAS:528:DC%2BD2cXhtVWitbjF (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

4
- 0037415828
- 10.1063/1.1542677 1:CAS:528:DC%2BD3sXotlSmtQ%3D%3D
- R.L. Hoffman B.J. Norris J.F. Wager 2003 Appl. Phys. Lett. 82 733 10.1063/1.1542677 1:CAS:528:DC%2BD3sXotlSmtQ%3D%3D
- (2003) Appl. Phys. Lett. , vol.82 , pp. 733
- Hoffman, R.L.¹ Norris, B.J.² Wager, J.F.³

5
- 0037450269
- 10.1063/1.1553997
- P.F. Carcia R.S. McLean M.H. Reilly J.G. Nunes 2003 Appl. Phys. Lett. 82 s1117 10.1063/1.1553997
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1117
- Carcia, P.F.¹ McLean, R.S.² Reilly, M.H.³ Nunes, J.G.⁴

6
- 16244382410
- Fully transparent ZnO thin-film transistor produced at room temperature
- DOI 10.1002/adma.200400368
- E. Fortunato P. Barquinha A. Pimentel A. Gonçalves A. Marques L. Pereira R. Martins 2005 Adv. Mater. 17 590 10.1002/adma.200400368 1:CAS:528:DC%2BD2MXislOht7Y%3D (Pubitemid 40448713)
- (2005) Advanced Materials , vol.17 , Issue.5 , pp. 590-594
- Fortunato, E.M.C.¹ Barquinha, P.M.C.² Pimentel, A.C.M.B.G.³ Goncalves, A.M.F.⁴ Marques, A.J.S.⁵ Pereira, L.M.N.⁶ Martins, R.F.P.⁷

7
- 67349259175
- 10.1109/LED.2009.2017496 1:CAS:528:DC%2BD1MXmtVOmt7k%3D
- D. Heineck B. McFarlane J. Wager 2009 IEEE Electron. Dev. Lett. 30 514 10.1109/LED.2009.2017496 1:CAS:528:DC%2BD1MXmtVOmt7k%3D
- (2009) IEEE Electron. Dev. Lett. , vol.30 , pp. 514
- Heineck, D.¹ McFarlane, B.² Wager, J.³

8
- 77953639937
- 10.1063/1.3430988
- H. Frenzel A. Lajn H. von Wenckstern M. Grundmann 2010 J. Appl. Phys. 107 114515 10.1063/1.3430988
- (2010) J. Appl. Phys. , vol.107 , pp. 114515
- Frenzel, H.¹ Lajn, A.² Von Wenckstern, H.³ Grundmann, M.⁴

9
- 77954255049
- 10.1002/pssa.200983771 1:CAS:528:DC%2BC3cXnslSisb8%3D
- M. Grundmann H. Frenzel A. Lajn M. Lorenz F. Schein H. von Wenckstern 2010 Phys. Stat. Sol. A 207 1437 10.1002/pssa.200983771 1:CAS:528: DC%2BC3cXnslSisb8%3D
- (2010) Phys. Stat. Sol. A , vol.207 , pp. 1437
- Grundmann, M.¹ Frenzel, H.² Lajn, A.³ Lorenz, M.⁴ Schein, F.⁵ Von Wenckstern, H.⁶

10
- 33644680544
- Mean barrier height of Pd Schottky contacts on ZnO thin films
- DOI 10.1063/1.2180445
- H. von Wenckstern G. Biehne R.A. Rahman H. Hochmuth M. Lorenz M. Grundmann 2006 Appl. Phys. Lett. 88 092102 10.1063/1.2180445 (Pubitemid 43334439)
- (2006) Applied Physics Letters , vol.88 , Issue.9 , pp. 092102
- Von Wenckstern, H.¹ Biehne, G.² Rahman, R.A.³ Hochmuth, H.⁴ Lorenz, M.⁵ Grundmann, M.⁶

11
- 70350081241
- 10.1116/1.3086718 1:CAS:528:DC%2BD1MXmvF2ktLc%3D
- A. Lajn H. von Wenckstern Z. Zhang C. Czekalla G. Biehne J. Lenzner H. Hochmuth M. Lorenz M. Grundmann S. Wickert R. Denecke 2009 J. Vac. Sci. Technol. B 27 1769 10.1116/1.3086718 1:CAS:528:DC%2BD1MXmvF2ktLc%3D
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1769
- Lajn, A.¹ Von Wenckstern, H.² Zhang, Z.³ Czekalla, C.⁴ Biehne, G.⁵ Lenzner, J.⁶ Hochmuth, H.⁷ Lorenz, M.⁸ Grundmann, M.⁹ Wickert, S.¹⁰ Denecke, R.¹¹

12
- 34547683258
- Silver oxide Schottky contacts on n-type ZnO
- DOI 10.1063/1.2768028
- M.W. Allen S.M. Durbin J.B. Metson 2007 Appl. Phys. Lett. 91 053512 10.1063/1.2768028 (Pubitemid 47210867)
- (2007) Applied Physics Letters , vol.91 , Issue.5 , pp. 053512
- Allen, M.W.¹ Durbin, S.M.² Metson, J.B.³

13
- 62549165418
- 10.1063/1.3089871
- M.W. Allen R.J. Mendelsberg R.J. Reeves S.M. Durbin 2009 Appl. Phys. Lett. 94 103508 10.1063/1.3089871
- (2009) Appl. Phys. Lett. , vol.94 , pp. 103508
- Allen, M.W.¹ Mendelsberg, R.J.² Reeves, R.J.³ Durbin, S.M.⁴

14
- 25144462707
- A comprehensive review of ZnO materials and devices
- DOI 10.1063/1.1992666, 041301
- U. Oezguer Y.I. Alivov C. Liu A. Teke M.A. Reshchikov S. Dogan V. Avrutin S.-J. Cho H. Morkoc 2005 J. Appl. Phys. 98 041301 10.1063/1.1992666 (Pubitemid 41348664)
- (2005) Journal of Applied Physics , vol.98 , Issue.4 , pp. 1-103
- Ozgur, U.¹ Alivov, Ya.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Dogan, S.⁶ Avrutin, V.⁷ Cho, S.-J.⁸ Morko, H.⁹

15
- 69549096024
- 10.1109/TED.2009.2026393 1:CAS:528:DC%2BD1MXhtFWru7fK
- M.W. Allen X.J. Weng J.M. Redwing K. Sarpatwari S.E. Mohney H. von Wenckstern M. Grundmann S.M. Durbin 2009 IEEE Trans. Electron. Dev. 56 2160 10.1109/TED.2009.2026393 1:CAS:528:DC%2BD1MXhtFWru7fK
- (2009) IEEE Trans. Electron. Dev. , vol.56 , pp. 2160
- Allen, M.W.¹ Weng, X.J.² Redwing, J.M.³ Sarpatwari, K.⁴ Mohney, S.E.⁵ Von Wenckstern, H.⁶ Grundmann, M.⁷ Durbin, S.M.⁸

16
- 71649100636
- 10.1016/j.tsf.2009.02.149 1:CAS:528:DC%2BD1MXhsVCrsbnE
- H. Frenzel A. Lajn M. Brandt H. von Wenckstern G. Biehne H. Hochmuth M. Grundmann 2009 Thin Solid Films 518 1119 10.1016/j.tsf.2009.02.149 1:CAS:528:DC%2BD1MXhsVCrsbnE
- (2009) Thin Solid Films , vol.518 , pp. 1119
- Frenzel, H.¹ Lajn, A.² Brandt, M.³ Von Wenckstern, H.⁴ Biehne, G.⁵ Hochmuth, H.⁶ Grundmann, M.⁷

17
- 36449000058
- 10.1063/1.347243 1:CAS:528:DyaK3MXhtlelt74%3D
- J.H. Werner H.H. Güttler 1991 J. Appl. Phys. 69 1522 10.1063/1.347243 1:CAS:528:DyaK3MXhtlelt74%3D
- (1991) J. Appl. Phys. , vol.69 , pp. 1522
- Werner, J.H.¹ Güttler, H.H.²

18
- 0019636219
- Phase-shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states
- DOI 10.1063/1.328619
- H. Oheda 1981 J. Appl. Phys. 52 6693 10.1063/1.328619 1:CAS:528:DyaL3MXmtlSnsbw%3D (Pubitemid 12448089)
- (1981) Journal of Applied Physics , vol.52 , Issue.11 , pp. 6693-6700
- Oheda Hidetoshi¹

19
- 52949096855
- 10.1063/1.2989125
- M. Nakano T. Makino A. Tsukazaki K. Ueno A. Ohtomo T. Fukumura H. Yuji S. Akasaka K. Tamura K. Nakahara T. Tanabe A. Kamisawa M. Kawasaki 2008 Appl. Phys. Lett. 93 123309 10.1063/1.2989125
- (2008) Appl. Phys. Lett. , vol.93 , pp. 123309
- Nakano, M.¹ Makino, T.² Tsukazaki, A.³ Ueno, K.⁴ Ohtomo, A.⁵ Fukumura, T.⁶ Yuji, H.⁷ Akasaka, S.⁸ Tamura, K.⁹ Nakahara, K.¹⁰ Tanabe, T.¹¹ Kamisawa, A.¹² Kawasaki, M.¹³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.