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Volumn 107, Issue 11, 2010, Pages

Ultrathin gate-contacts for metal-semiconductor field-effect transistor devices: An alternative approach in transparent electronics

(4) Frenzel, H a Lajn, A a Von Wenckstern, H a Grundmann, M a

a UNIVERSITY OF LEIPZIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE APPROACH; CAPPING LAYER; COST MANUFACTURING; FIELD-EFFECT MOBILITIES; LOW TEMPERATURES; MAXIMUM GAIN; MESFETS; ORGANICS; RESEARCH FIELDS; ROOM TEMPERATURE; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SWITCHING VOLTAGES; TRANSPARENT ELECTRONICS; TRANSPARENT METALS; ULTRA-THIN; VOLTAGE SWEEP; ZNO;

CARBON NANOTUBES; DISTILLATION; ION BEAMS; MESFET DEVICES; METAL INSULATOR BOUNDARIES; MIS DEVICES; PLATINUM; SEMICONDUCTOR DEVICES; SILVER; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 77953639937 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3430988 Document Type: Article

Times cited : (16)

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