메뉴 건너뛰기




Volumn 325, Issue , 2003, Pages 138-148

Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

Author keywords

Barrier height inhomogeneity; Metal semiconductor contacts; MIS structure

Indexed keywords

COPPER; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES;

EID: 0037213847     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01515-6     Document Type: Article
Times cited : (70)

References (45)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.