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Volumn 325, Issue , 2003, Pages 138-148
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Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes
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Author keywords
Barrier height inhomogeneity; Metal semiconductor contacts; MIS structure
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Indexed keywords
COPPER;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONTACTS;
INTERFACES (MATERIALS);
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR METAL BOUNDARIES;
INTERFACIAL LAYERS;
SCHOTTKY BARRIER DIODES;
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EID: 0037213847
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(02)01515-6 Document Type: Article |
Times cited : (70)
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References (45)
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