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Volumn 51, Issue 2, 2011, Pages 360-364
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The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BARRIER HEIGHTS;
GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT;
IDEALITY FACTORS;
INHOMOGENEITIES;
INSULATOR LAYER;
IV CHARACTERISTICS;
LINEAR PORTIONS;
NON-LINEARITY;
P-TYPE SI;
RICHARDSON CONSTANT;
RICHARDSON PLOT;
SCHOTTKY BARRIERS;
SCHOTTKY DIODES;
TEMPERATURE COEFFICIENT;
TEMPERATURE DEPENDENCE;
TEMPERATURE RANGE;
THEORETICAL RESULT;
THEORETICAL VALUES;
THERMIONIC-FIELD EMISSION;
TRANSPORT MECHANISM;
TUNNELING CURRENT;
ZERO-BIAS;
ACTIVATION ENERGY;
CURRENT VOLTAGE CHARACTERISTICS;
DIODES;
FIELD EMISSION;
GAUSSIAN DISTRIBUTION;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
TEMPERATURE DISTRIBUTION;
THERMIONIC EMISSION;
SCHOTTKY BARRIER DIODES;
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EID: 79551489170
PISSN: 00262714
EISSN: None
Source Type: Journal
DOI: 10.1016/j.microrel.2010.08.017 Document Type: Conference Paper |
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Times cited : (33)
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References (47)
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