Evaluation of Schottky barrier parameters of Pd/Pt Schottky contacts on n-InP (100) in wide temperature range

Superlattices and Microstructures

Volumn 45, Issue 1, 2009, Pages 22-32

  Ashok Kumar, A ^a   Janardhanam, V ^a   Rajagopal Reddy, V ^a   Narasimha Reddy, P ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Barrier inhomogeneity; Metal semiconductor interfaces; n InP; Pd Pt Schottky contacts; Temperature dependent

Indexed keywords

CONTACTS (FLUID MECHANICS); CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR MATERIALS;

BARRIER INHOMOGENEITY; METAL-SEMICONDUCTOR INTERFACES; N-INP; PD/PT SCHOTTKY CONTACTS; TEMPERATURE DEPENDENT;

SCHOTTKY BARRIER DIODES;

EID: 58149141522     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.10.016     Document Type: Article

References (40)

1. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts. 2nd ed. (1988), Clarendon, Oxford
2. Henisch H.K. Semiconductor Contacts (1984), Oxford University, London
3. Wilmsen C.W. Physics and Chemistry of III - V Compound Semiconductor Interfaces (1985), Plenum, New York
4. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley, New York
5. Ayyildiz E., Turut A., Efeoglu H., Tuzeman S., Saglam M., and Yogurtan Y.K. Solid-State Electron. 39 (1996) 83
6. Horvath L.S. J. Appl. Phys. 63 (1988) 976
7. Tung R.T. Mater. Sci. Eng. R 35 (2001) 1
8. Mc Cafferty P.G., Sellai A., Dawson P., and Elasd H. Solid-State Electron. 39 (1996) 583
9. Chand S., and Kumar J. Appl. Phys. A 65 (1996) 497
10. Chand S., and Kumar J. Semicond. Sci. Technol. 10 (1995) 1680
11. Karatas S., Altindal S., and Caskar M. Physica B 357 (2005) 386
12. Hackam R., and Harrop P. IEEE Trans. Electron. Devices 19 (1972) 1231
13. Bhuiyan A.S., Martinez A., and Esteve D. Thin Solid Films 161 (1988) 93
14. Doknee I., and Altindal S. Semicond. Sci. Technol. 21 (2006) 1053
15. Song Y.P., Van Meirhaeghe R.L., Laflere W.H., and Cardon P. Solid-State Electron. 29 (1986) 633
16. Werner J.H., and Guttler H.H. J. Appl. Phys. 69 (1991) 1522
17. Werner J.H., and Guttler H.H. J. Appl. Phys. 73 (1993) 1315
18. Gumus A., Trust A., and Yalcin N. J. Appl. Phys. 91 (2002) 245
19. Bandyopadyay S., Battacharya A., and Sen S.K. J. Appl. Phys. 85 (1991) 3671
20. Lonergan M.C., and Zones F.E. J. Chem. Phys. 115 (2001) 433
21. Tung R.T. Phys. Rev. B 45 (1992) 13509
22. Cetin H., and Ayyildiz E. Semicond. Sci. Technol. 20 (2005) 625
23. Cimilli F.E., Saglam M., and Turut A. Semicond. Sci. Technol. 22 (2007) 851
24. Ashok Kumar A., Janardhanam V., Rajagopal Reddy V., and Narasimha Reddy P. J. Optoelectron. Advanced Mater. 9 (2007) 3877
25. F.E. Cimilli, H. Efeoglu, M. Saglam, A. Turut, J. Matter Sci: Mater. Electron. (in press)
26. Hattori K., and Torii Y. Solid-State Electron. 34 (1991) 527
27. Card H.C., and Rhoderick E.H. J. Phys. D 4 (1971) 1589
28. Padovani F.A., and Stratton R. Solid-State Electron. 9 (1966) 695
29. Crowell C.R., and Rideout V.L. Solid-State Electron. 12 (1969) 89
30. Freeouf J.L. Appl. Phys. Lett. 4 (1982) 285
31. Monch W. J. Vac. Sci. Technol. B 17 (1999) 1867
32. Schmitsdorf R.F., Kampen T.U., and Monch W. J. Vac. Sci. Technol. B 15 (1997) 1221
33. Hardikar S., Hudait M.K., Modak P., Krupanidhi S.B., and Padha N. Appl. Phys. A 68 (1999) 49
34. Wegner L.F., Young R.W., and Sugermen A. IEEE Electron. Dev. Lett. 4 (1983) 320
35. Cheung S.K., and Cheung N.W. Appl. Phys. Lett. 49 (1986) 85
36. Chand S., and Kumar J. J. Appl. Phys. 80 (1996) 288
37. Osvald J., and Horvath Z.J. Appl. Surf. Sci. 234 (2004) 349
38. Chand S., and Bala S. Appl. Surf. Sci. 252 (2005) 358
39. Cavlet L.E., Wheeler R.G., and Reed M.A. Appl. Phys. Lett. 80 (2002) 1761
40. Forment S., Van Meirhaeghe R.L., De Vrieze A., Strubbe K., and Gomes W.P. Semicond. Sci. Technol. 16 (2001) 975