Barrier characteristics of gold Schottky contacts on moderately doped n-InP based on temperature dependent I-V and C-V measurements

Microelectronic Engineering

Volumn 86, Issue 1, 2009, Pages 88-95

  Soylu, M ^a   Abay, B ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneities; Gaussian distribution; InP; Schottky diode; Temperature dependent I V and C V measurements

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; GAUSSIAN DISTRIBUTION; LINEARIZATION; SEMICONDUCTOR DIODES; THERMIONIC EMISSION; TRELLIS CODES;

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CAPACITANCE VOLTAGES; CHARACTERISTIC PARAMETERS; DIODE PARAMETERS; EXPERIMENTAL DATUMS; IDEALITY FACTORS; INP; METAL-SEMICONDUCTOR INTERFACES; RICHARDSON CONSTANTS; RICHARDSON PLOTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODE; STANDARD DEVIATIONS; STRAIGHT LINES; TEMPERATURE DEPENDENCES; TEMPERATURE DEPENDENT I-V AND C-V MEASUREMENTS; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES;

SCHOTTKY BARRIER DIODES;

EID: 57149115332     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.045     Document Type: Article

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