Barrier characteristics of Cd/p-GaTe Schottky diodes based on I-V-T measurements

Semiconductor Science and Technology

Volumn 18, Issue 2, 2003, Pages 75-81

  Abay, B ^a   Cankaya G ^a   Guder H S ^a,b   Efeoglu H ^a   Yogurtcu Y K ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b MUSTAFA KEMAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; THERMIONIC EMISSION;

IMAGE FORCE LOWERING;

SCHOTTKY BARRIER DIODES;

EID: 0037322548     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/302     Document Type: Article

References (52)

1. Lee P A (ed) 1976 Optical and Electrical Properties of Layered Materials (Dordrecht: Reidel)
2. Lang O, Schlaf R, Pettenkofer C and Jaegermann W 1994 J. Appl. Phys. 75 7805
3. Pearson W B 1964 Acta Cryst. 17 1
4. Fielding P, Fischer G and Mooser E 1959 J. Phys. Chem. Solids 8 434
5. Manfredotti C, Murri R, Rizzo A, Vasanelli L and Micocci G 1975 Phys. Status Solidi a 29 475
6. Augelli V, Manfredotti C, Murri R, Piccioli R, Rizzo A and Vasanelli L 1977 Solid State Commun. 21 575
7. Sánchez-Royo J F, Segura A and Muñoz V 1995 Phys. Status Solidi a 151 257
8. Güder H S, Abay B, Efeoǧlu H and Yoǧurtçu Y K 2001 J. Lumin. 93 243
9. Almeida J, Berger H and Margaritondo G 1998 J. Appl. Phys. 84 1990
10. Bose D N and Pal S 1997 Phil. Mag. 75 311
11. Wagner L F, Young R W and Sugerman A 1983 IEEE Electron Device Lett. EDL-4 320
12. Padovani F A and Stratton R 1996 Solid-State Electron. 9 695
13. Werner J H 1989 Appl. Phys. A 47 291
14. Chaung C T 1984 Solid-State Electron. 27 299
15. Horvath Zs J, Bosacchi A, Franchi S, Gombia E, Mosca R and Motta A 1994 Mater. Sci. Eng. B 28 429
16. Song Y P, Van Meirhaeghe R L, Laflere W H and Cardon F 1986 Solid-State Electron. 29 633
17. Chand S and Kumar J 1996 Appl. Phys. A 63 171
18. Cova P and Singh A 1990 Solid-State Electron. 33 11
19. Tung R T 1992 Phys. Rev. B 45 13509
20. Chin V W L, Green M A and Storey J W V 1990 J. Appl. Phys. 68 3470
21. Chand S and Kumar J 1995 Semicond. Sci. Technol. 10 1680
22. Padovani F A and Sumner G 1965 Appl. Phys. A 36 3744
23. Newman N, Schilfgaarde M V, Kendelwicz T, Williams M D and Spicer W E 1986 Phys. Rev. B 33 1146
24. Thanailakis A and Rasul A 1976 J. Phys. C: Solid State Phys. 9 337
25. Crowell C R 1977 Solid-State Electron. 20 171
26. Roderick E H and Williams R H 1988 Metal-Semiconductor Contacts (Oxford: Clarendon) pp 99-100
27. Tung R T, Sullivan J P and Schrey F 1992 Mater. Sci. Eng. B 14 266
28. Werner J H and Güttler H 1991 J. Appl. Phys. 69 1522
29. Gümüs A, Türüt A and Yalçin N 2002 J. Appl. Phys. 91 245
30. Sullivan J P, Tung R T, Pinto M R and Graham W R 1991 J. Appl. Phys. 70 7403
31. Schmitsdrof R F, Kampen T U and Mönch W 1997 J. Vac. Sci. Technol. B 15 1221
32. Hudait M K and Krupanidhi S B 2001 Physica B 307 125
33. Zhu S, Detavernier C, Van Meirhaeghe R L, Cardon F, Ru Guo-Ping, Qu Xin-Ping and Li Bing-Zong 2000 Solid-State Electron. 44 1807
34. Abay B 1994 PhD Thesis (in Turkish) Atatürk University Graduate School of Natural & Applied Science Erzurum, Turkey (unpublished)
35. Güder H S 1999 PhD Thesis (in Turkish) Atatürk University Graduate School of Natural & Appplied Science, Erzurum, Turkey (unpublished)
36. Çankaya G 2001 Control software for the I-V measurements (GmisIV.exe) Erzurum, Turkey (unpublished)
37. Hernández M P, Alonso C F and Peña J L 2001 J. Phys. D: Appl. Phys. 34 1157
38. Ranuárez J C, Ortiz-Conde A and García Sánchez F J 2000 Microelectron. Reliab. 40 355
39. Chand S 2002 Private communication
40. Gouskov L, Gouskov A, Lemos V, May W and Sampaio H 1977 Phys. Status Solidi a 39 65
41. Wittemar M 1990 Phys. Rev. B 42 5249
42. Tatsuyama C, Watanabe Y, Hamagucci C and Nakai J 1970 J. Phys. Soc. Japan 29 150
43. Camassel J, Merle P, Mathieu H and Gouskov A 1979 Phys. Rev. B 19 1060
44. Werner J H and Güttler H 1993 J. Appl. Phys. 73 1522
45. Cody G D, Tiedje T, Abales B and Goldstein Y 1981 Phys. Rev. Lett. 47 1480
46. McCafferty P G, Sellai A, Dawson P and Elabd H 1996 Solid-State Electron. 39 583
47. Unewisse M H and Storey J W V 1993 J. Appl. Phys. 73 3873
48. Missous M and Rhoderick E H 1991 J. Appl. Phys. 69 7142
49. Chand S and Kumar J 1996 J Appl. Phys. 80 288
50. Zhu S, Van Meirhaeghe R L, Detavernier C, Cardon F, Ru Guo-Ping, Qu Xin-Ping and Li Bing-Zong 2000 Solid-State Electron. 44 663
51. Bandyopadhyah S, Bahattacharyya A and Sen S K 1999 J. Appl. Phys. 85 3671
52. Chand S 2002 Semicond. Sci. Technol. 17 L36