Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

Physica B: Condensed Matter

Volumn 404, Issue 8-11, 2009, Pages 1558-1562

  Cimilli, F E ^a   Saglam M ^a   Efeoglu H ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

n InP semiconductor; Schottky barrier inhomogeneity; Schottky diodes

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITY; ELECTRON TRANSPORTS; GAUSSIAN; METAL-SEMICONDUCTOR INTERFACES; N-INP SEMICONDUCTOR; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER INHOMOGENEITY; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DIODES;

SCHOTTKY BARRIER DIODES;

EID: 64449088674     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.01.018     Document Type: Article

References (49)

1. Yan H., Shunsuke E., Yusuke H., and Hidenori O. Chem. Lett. 36 8 (2007) 986
2. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts (1988), Clarendon Press, Oxford University Press, Oxford p. 20, 48
3. Cetin H., and Ayyildiz E. Semicond. Sci. Technol. 20 (2005) 625
4. Williams R.H., and Robinson G.Y. In: Wilmsen C.W. (Ed). Physics and Chemistry of III-V Compound Semiconductor Interfaces (1985), Plenum Press, New York
5. Van Meirhaeghe R.L., Laflére W.H., and Cardon F. J. Appl. Phys. 76 (1994) 403
6. Gur E., Tuzemen S., Kilic B., and Coskun C. J. Phys. Condens. Matter 19 (2007) 196206
7. Rouag N., Boussouar L., Toumi S., Ouennoughi Z., and Djouadi M.A. Semicond. Sci. Technol. 22 4 (2007) 369
8. Kim D.M., Kim D.H., and Lee S.Y. Solid-State Electron. 51 (2007) 865
9. Qasrawi A.F. Semicond. Sci. Technol. 21 (2006) 794
10. El-Nahass M.M., Zeyada H.M., Abd-El-Rahman K.F., and Darwish A.A.A. Sol. Energy Mater. Sol. Cells 91 (2007) 1120
11. Dhananjay, Nagaraju J., and Krupanidhi S.B. Physica B 391 (2007) 344
12. Pérez R., Mestres N., Montserrat J., Tournier D., and Godignon P. Phys. Stat. Sol. (a) 202 4 (2005) 692
13. Arehart A.R., Moran B., Speck J.S., Mishra U.K., Den Baars S.P., and Ringel S.A. J. Appl. Phys. 100 (2006) 023709
14. Roccaforte F., La Via F., Raineri V., Pierobon R., and Zanoni E. J. Appl. Phys. 93 11 (2003) 9137
15. Pirri C.F., Ferrero S., Scaltrito L., Perrone D., Guastella S., Furno M., Richieri G., and Merlin L. Microelectron. Eng. 83 (2006) 86
16. Vassilevski K.V., Nikitina I.P., Wright N.G., Horsfall A.B., O_Neill A.G., and Johnson C.M. Microelectron. Eng. 83 (2006) 150
17. Pattabi M., Krishnan S., Ganesh, and Mathew X. Solar Energy 81 1 (2007) 111
18. Yakuphanoglu F. Physica B 389 2 (2007) 306
19. Kumar S., Katharria Y.S., Kumar S., and Kanjilal D. J. Appl. Phys. 100 (2006) 113723
20. Dokme I., Altindal S., and Bulbul M.M. Appl. Surf. Sci. 252 22 (2006) 7749
21. Dokme I., and Altindal S. Semicond. Sci. Technol. 21 8 (2006) 1053
22. Brovelli F., Rivas B.L., and Bernede J.C. J. Chilean Chem. Soc. 52 1 (2007) 1065
23. Dimitruk N.L., Borkovskaya O.Yu., Dimitruk I.N., Mamykin S.V., Horvath Zs.J., and Mamontova I.B. Appl. Surf. Sci. 190 (2002) 455
24. Kim S.W., Lee K.M., Lee J.H., and Seo K.S. IEEE Electron Device Lett. 26 11 (2005) 787
25. von Wenckstern H., Biehne G., Rahman R.A., Hochmuth H., Lorenz M., and Grundmann M. Appl. Phys. Lett. 88 9 (2006) 092102
26. Osvald J., and Horvath Z.J. Appl. Surf. Sci. 234 1-4 (2004) 349
27. Ayyildiz E., Cetin H., and Horvath Zs.J. Appl. Surf. Sci. 252 (2005) 1153
28. Jones F.E., Hafer C.D., Wood B.P., Danner R.G., and Lonergan M.C. J. Appl. Phys. 90 (2001) 1001
29. Im H.J., Ding Y., Pelz J.P., and Choyke W.J. Phys. Rev. B 64 7 (2001) 075310
30. Rossi R.C., and Lewis N.S. J. Phys. Chem. B 105 17 (2001) 12303
31. Song Y.P., Van Meirhaeghe R.L., Laflére W.H., and Cardon F. Solid-State Electron. 29 (1986) 633
32. Werner J.H., and Güttler H.H. J. Appl. Phys. 69 (1991) 1522
33. Chand S., and Kumar J. J. Appl. Phys. 82 (1997) 5005
34. Chand S., and Bala S. Appl. Surf. Sci. 252 (2005) 358
35. Chand S., and Kumar J. Appl. Phys. A 65 (1997) 497
36. Zhu S., Van Meirhaeghe R.L., Forment S., Ru G., and Li B. Solid-State Electron. 48 (2004) 29
37. Osvald J. J. Appl. Phys. 85 3 (1999) 1935
38. Dobrocka E., and Osvald J. Appl. Phys. Lett. 65 (1994) 575
39. Osvald J. Solid-State Electron. 50 (2006) 228
40. Biber M., and Turut A. J. Electron. Mater. 31 12 (2002) 1362
41. Biber M., Temirci C., and Turut A. J. Vac. Sci. Technol. B 20 1 (2002) 10
42. Biber M., Cakar M., and Turut A. J. Mater. Sci. Mater. Electron. 12 (2001) 575
43. Tung R.T. Phys. Rev. B 45 (1992) 13509
44. Sullivan J.P., Tung R.T., Pinto M.R., and Graham W.R. J. Appl. Phys. 70 (1991) 7403
45. Huang S., Shen B., Wang M.J., Xu F.J., Wang Y., Yang H.Y., Lin F., Lu L., Chen Z.P., Qin Z.X., Yang Z.J., and Zhang G.Y. Appl. Phys. Lett. 91 (2007) 072109
46. Gümüş A., Türüt A., and Yalçi{dotless}n N. J. Appl. Phys. 91 (2002) 245
47. Schmitsdorf R.F., Kampen T.U., and Mönch W. J. Vac. Sci. Technol. B 15 (1997) 1221
48. Leroy W.P., Opsomer K., Forment S., and Van Meirhaeghe R.L. Solid-State Electron. 49 (2005) 878
49. Cimilli F.E., Saglam M., and Turut A. Semicond. Sci. Technol. 22 (2007) 851