Schottky barrier height inhomogeneity of Ti/n-GaAs contact studied by the I-V-T technique

Chinese Physics Letters

Volumn 19, Issue 4, 2002, Pages 553-556

  Jiang, Yu Long ^a   Ru, Guo Ping ^a   Lu, Fang ^a   Qu, Xin Ping ^a   Li, Bing Zong ^a   Li, Wei ^b   Li, Ai Zhen ^b  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; THERMIONIC EMISSION;

BARRIER HEIGHTS; CURRENT-VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION MODEL; GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; HEIGHT DISTRIBUTION; SCHOTTKY BARRIER HEIGHT INHOMOGENEITIES; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SIMPLE LINEAR RELATIONSHIP; TEMPERATURE RANGE;

SCHOTTKY BARRIER DIODES;

EID: 0036011854     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/19/4/332     Document Type: Article

References (19)