Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature

Applied Surface Science

Volumn 253, Issue 17, 2007, Pages 7246-7253

  Güllü, Ö ^a   Biber, M ^a   Duman, S ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; GaAs; Hydrogen passivation; Schottky contact

Indexed keywords

CRYOSTATS; DANGLING BONDS; ELECTRIC VARIABLES MEASUREMENT; ENERGY BARRIERS; HYDROGEN; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE;

BARRIER INHOMOGENEITY; HELIUM CRYOSTATS; SCHOTTKY CONTACT;

SCHOTTKY BARRIER DIODES;

EID: 34249096886     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.03.002     Document Type: Article

References (61)

1. Kang M.G., and Park H.H. Vacuum 67 (2002) 91
2. Forment S., Biber M., Van Meirhaeghe R.L., Leroy W.P., and Turut A. Semicond. Sci. Technol. 19 (2004) 1391
3. Biber M., Gullu O., Forment S., Van Meirhaeghe R.L., and Turut A. Semicond. Sci. Technol. 21 (2006) 1
4. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts. 2nd ed. (1988), Clarendon, Oxford
5. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley, New York
6. Yuan Z.L., Chen X.F., Wang Z.H., Yong K.S., Cao Y., and Xu G.Q. J. Chem. Phys. 119 19 (2003) 10389
7. Horvath Zs.J. Solid State Electron. 39 (1996) 176
8. Horvath Zs.J., Adam M., Dusco Cs., Pinter I., Van Tuyen V., Barsony I., Gombia E., Mosca R., and Makaro Zs. Solid State Electron. 42 (1998) 221
9. Horvath Zs.J. Mater. Res. Soc. Symp. Proc. 260 (1992) 359
10. Horvath Zs.J., Bosacchi A., Franchi S., Gombia E., Mosca R., and Motta A. Mater. Sci. Eng. B 28 (1994) 429
11. Ayyildiz E., Cetin H., and Horvath Zs.J. Appl. Surf. Sci. 252 (2005) 1153
12. Horvath Zs.J. J. Appl. Phys. 64 (1988) 6780
13. Horvath Zs.J., Rakovics V., Szentpali B., Puspoki S., and Zdansky K. Vacuum 71 (2003) 113
14. Altindal S., Karadeniz S., Tugluoglu N., and Tataroglu A. Solid State Electron. 47 (2003) 1847
15. Chand S., and Kumar J. Semicond. Sci. Technol. 10 (1995) 1680
16. Chand S., and Kumar J. Appl. Phys. A 63 (1996) 171
17. Karatas S., Altindal S., Turut A., and Ozmen A. Appl. Surf. Sci. 217 (2003) 250
18. Chen H.I., and Chou Y.I. Semicond. Sci. Technol. 19 (2004) 39
19. Ebeoglu M.A., Temurtas F., and Ozturk Z.Z. Solid State Electron. 42 1 (1998) 23
20. Cho H.Y., Kim E.K., Min S.K., Chang K.J., and Lee C. Appl. Phys. Lett. 58 17 (1991)
21. Wagener M.C., Botha J.R., and Leitch A.W.R. Semicond. Sci. Technol. 14 (1999) 1080
22. Wang Y., Darici Y., and Holloway P.H. J. Appl. Phys. 71 3 (1992) 2746
23. Stievenard D., Boddaert X., and Vonbardeleben H.J. J. Appl. Phys. 67 9 (1990) 4385
24. Jin S.X., Wang L.P., Yuan M.H., Chen J.J., Jia Y.Q., and Quin G.G. J. Appl. Phys. 71 1 (1992) 536
25. Padovani F.A., and Sumner G.G. J. Appl. Phys. 36 (1965) 3744
26. Padovani F.A. In: Willardson R.K., and Beer A.C. (Eds). Semiconductors and Semimetals vol. 6 (1971), Academic Press, New York
27. Padovani F.A., and Stratton R. Solid State Electron. 9 (1966) 695
28. Hackam R., and Harrop P. IEEE Trans. Electron. Dev. 19 (1972) 1231
29. Bhuiyan A.S., Martinez A., and Esteve D. Thin Solid Films 161 (1988) 93
30. Werner J.H., and Guttler H.H. J. Appl. Phys. 69 (1991) 1522
31. Levine J.D. J. Appl. Phys. 42 (1971) 3991
32. Crowell C.R., and Rideout V.L. Solid State Electron. 12 (1969) 89
33. Ashok S., Borrego J.M., and Gutmann R. Solid State Electron. 22 (1979) 621
34. Hanselaer P.L., Laflere W.H., Van Meirhaege R.L., and Cardon F. J. Appl. Phys. 56 (1984) 2309
35. Sullivan J.P., Tung R.T., Pinto M.R., and Graham W.R. J. Appl. Phys. 70 (1991) 7403
36. Tung R.T. Phys. Rev. B 45 13 (1992) 509
37. Schmitsdorf R.F., Kampen T.U., and Mönch W. J. Vac. Sci. Technol. B 15 (1997) 1221
38. Kampen T.U., Park S., and Zahn D.R.T. Appl. Surf. Sci. 190 (2002) 461
39. Biber M., Cakar M., and Turut A. J. Mater. Sci. 12 (2001) 575
40. Biber M. Physica B 325 (2003) 138
41. Biber M., Coskun C., and Turut A. Eur. Phys. J. Appl. Phys. 31 (2005) 79
42. Temirci C., Bati B., Saglam M., and Turut A. Appl. Surf. Sci. 172 (2001) 1
43. Gumus A., Turut A., and Yalcin N. J. Appl. Phys. 91 (2002) 245
44. Duman S., Gurbulak B., and Turut A. Appl. Surf. Sci. 253 8 (2007) 3899
45. Anilturk S., and Turan R. Solid State Electron. 44 (2000) 41
46. Hardikar S., Hudait M.K., Modak P., Krupanidhi S.B., and Padha N. Appl. Phys. A 68 (1999) 49
47. Osvald J. Semicond. Sci. Technol. 18 (2003) L24
48. Osvald J., and Horvath Z.J. Appl. Surf. Sci. 234 1-4 (2004) 349
49. Dobrocka E., and Osvald J. Appl. Phys. Lett. 65 (1994) 575
50. Lahnor P., Seiter K., Schulz M., Dorsch W., and Scholz R. Appl. Phys. A 61 (1995) 369
51. Zhu S.Y., Van Meirhaeghe R.L., Detavernier C., Cardon F., Ru G.P., Qu X.P., et al. Solid State Electron. 44 (2000) 663
52. Ru G.P., Van Meirhaeghe R.L., Forment S., Jiang Y.L., Qu X.P., Zhu S., and Li B.Z. Solid State Electron. 49 (2005) 606
53. Song Y.P., Van Meirhaeghe R.L., Laflere W.H., and Cardon F. Solid State Electron. 29 (1986) 633
54. Van Meirhaeghe R.L., Laflere W.H., and Cardon F. J. Appl. Phys. 76 1 (1994) 403
55. Vanalme G.M., Van Meirhaeghe R.L., Cardon F., and van Daele P. Semicond. Sci. Technol. 12 (1997) 907
56. Newman N., van Schilfgaarde M., Kendelewicz T., Williams D.M., and Spicer W.E. Phys. Rev. B 33 (1986) 1146
57. Hudait M.K., Venkateswarlu P., and Krupanidhi S.B. Solid State Electron. 45 (2001) 133
58. Jones F.E., Wood B.P., Myers J.A., Daniels C.H., and Lonergan M.C. J. Appl. Phys. 86 (1999) 6431
59. Jones F.E., and Lonergan M.C. J. Chem. Phys. 115 1 (2001) 433
60. De Blasi C., Micocci G., Mongelli S., and Tepore A. J. Cryst. Growth 57 (1982) 482
61. Gibson G.A., Chaiken A., Nauka K., Yang C.C., Davidson R., Holden A., Bicknell R., Yeh B.S., Chen J., Liao H., Subramanian S., Schult D., Jasinski J., and Liliental-Weber Z. Appl. Phys. Lett. 86 (2005) 051902