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Volumn 109, Issue 7, 2011, Pages

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(6) Nomura, Kenji a Kamiya, Toshio a Ikenaga, Eiji b Yanagi, Hiroshi a Kobayashi, Keisuke c Hosono, Hideo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; AMORPHOUS OXIDE SEMICONDUCTORS; ANGLE-DEPENDENT; DEPTH ANALYSIS; DISORDERED STRUCTURES; ELECTRON DENSITIES; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HIGH ENERGY PHOTONS; IN-VACUUM; META-STABLE STATE; O-H BOND; SURFACE REGION; THERMAL-ANNEALING; VALENCE-BAND MAXIMUMS; ZNO;

AMORPHOUS FILMS; ANNEALING; ELECTRONIC STATES; ELECTRONS; PHOTOELECTRICITY; PHOTONS; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79955379099 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3560769 Document Type: Conference Paper

Times cited : (181)

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