Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 133-141

  Hudait, M K ^a   Venkateswarlu, P ^a,b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b INDIAN SPACE RESEARCH ORGANISATION   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; GOLD; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

HETEROEPITAXY; RICHARDSON CONSTANTS; ZERO-BIAS BARRIER HEIGHTS;

SCHOTTKY BARRIER DIODES;

EID: 0035151969     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00230-6     Document Type: Article

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