Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements

Solid-State Electronics

Volumn 39, Issue 4 SPEC. ISS., 1996, Pages 583-592

  McCafferty, P G ^a   Sellai, A ^a,c   Dawson, P ^a   Elabd, H ^b  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^b Fairchild Imaging   (United States)

^c FERHAT ABBAS UNIVERSITY   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

FERMI LEVEL; RICHARDSON PLOTS;

SCHOTTKY BARRIER DIODES;

EID: 0030129881     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00162-X     Document Type: Article

References (36)

1. P. W. Pelligrini, C. E. Ludington and M. M. Weeks, J. appl. Phys. 67, 1417 (1990).
2. A. Kikuchi, T. Ohshima and Y. Shiraki, J. appl Phys. 64, 4614 (1988).
3. A. Kikuchi, J. appl. Phys. 74, 3270 (1993).
4. A. Tanabe, K. Konuma, N. Teranishi, S. Tohyama and K. Masubuchi, J. appl. Phys. 69, 850 (1991).
5. H. H. Guttler and J. H. Werner, Appl. Phys. Lett. 56, 1113 (1990).
6. J. H. Werner and H. H. Guttler, J. appl. Phys. 69, 1522 (1991).
7. J. H. Werner, H. H. Guttler and U. Rau, Mat. Res. Soc. Symp. Proc. 260, 311 (1992).
8. M. O. Aboelfotoh, J. appl. Phys. 69, 3351 (1991).
9. V. W. L. Chin, M. A. Green and J. W. V. Storey, Solid-St. Electron. 33, 299 (1990).
10. V. W. L. Chin, M. A. Green and J. W. V. Storey, Solid-St. Electron. 36, 1107 (1993).
11. A. Sellai, P. G. McCafferty, P. Dawson, S. H. Raza and H. S. Gamble, Infrared Detectors: State of the Art I (Edited by W. H. Makky). Proc. SPIE 1735, 240 (1992).
12. A. Sellai, P. G. McCafferty, P. Dawson, S. H. Raza and H. S. Gamble, Int. J. Optoel. 19, 65 (1994).
13. A. Sayed, Fabrication and photoemission measurements were performed at Loral Fairchild Imaging Systems (Milpitas, CA). Internal report.
14. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd Edn, p. 39. Oxford University Press (1988).
15. C. Boutrit, J. C. Georges and S. Ravelet, IEE Proc. 127, 250 (1990).
16. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd Edn, p. 118. Oxford University Press (1988).
17. J. D. Levine, J. appl. Phys. 42, 3991 (1971).
18. C. R. Crowell, SoKd-St. Electron. 20, 171 (1977).
19. C. R. Crowell and V. L. Rideout, Solid-St. Electron. 12, 28 (1973).
20. L. F. Wagner, R. W. Young and A. Sugerman, IEEE Electron Device Lett. 4, 320 (1983).
21. S. M. Sze, Physics of Semiconductor Devices, 2nd Edn, p. 81. Wiley, New York (1981).
22. J. H. Werner and H. H. Guttler, J. appl. Phys. 73, 1315 (1993).
23. M. H. Unewisse and J. W. V. Storey, J. appl. Phys. 73, 3873 (1993).
24. P. Niedermann, L. Quattropani, K. Solt, A. D. Kent and O. Fischer, J. Vac. Sci. Technol. B 10, 580 (1992).
25. H. B. Ghozlene, P. Beaufrere and A. Authier, J. appl. Phys. 49, 3998 (1978).
26. P. E. Schmid, P. S. Ho, H. Foll and T. Y. Tan, Phys. Rev. B 28, 4593 (1983).
27. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd Edn, p. 36. Oxford University Press (1988).
28. J. M. Mooney, Ph.D. Thesis, University of Arizona (1986).
29. I. Ohdomari and H. Aochi, Phys. Rev. B 35, 682 (1987).
30. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984); Phys. Rev. 32, 6968 (1995).
31. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984); Phys. Rev. 32, 6968 (1995).
32. M. O. Aboelfotoh and K. M. Tu, Phys. Rev. B 34, 2311 (1986); M. O. Aboelfotoh, J. appl. Phys. 64, 4046 (1988).
33. M. O. Aboelfotoh and K. M. Tu, Phys. Rev. B 34, 2311 (1986); M. O. Aboelfotoh, J. appl. Phys. 64, 4046 (1988).
34. V. W. L. Chin and J. W. V. Storey, J. appl. Phys. 68, 4127 (1990).
35. M. O. Aboelfotoh, Solid-St. Electron. 34, 51 (1991).
36. J. Y. Duboz, P. A. Badoz, F. Arnaud d'Avitaya and E. Rosencher, J. Elec. Mat. 19, 101 (1990).