Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

Thin Solid Films

Volumn 486, Issue 1-2, 2005, Pages 38-41

  Takagi, Akihiro ^a   Nomura, Kenji ^a   Ohta, Hiromichi ^a,b   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Amorphous materials; Electrical properties; Optical properties; Semiconductors

Indexed keywords

AMORPHOUS MATERIALS; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; HALL EFFECT; OPTICAL PROPERTIES; OXIDES; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILMS;

CARRIER TRANSPORT; HALL MEASUREMENTS; HALL MOBILITY; HALL VOLTAGE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 21844451632     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.223     Document Type: Conference Paper

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