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Volumn 22, Issue 47, 2010, Pages 5332-5349

Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits

Author keywords

integrated circuits; MESFETs; transparent electronics; zinc oxide

Indexed keywords

CHANNEL MOBILITY; COST TRANSPARENT; DEVICE PERFORMANCE; GAAS; GAN TECHNOLOGY; HIGH GAIN; HIGH-POWER; HIGH-SPEED; LOW OPERATING VOLTAGE; MESFETS; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; OXIDE ELECTRONICS; RECENT PROGRESS; RELIABILITY AND STABILITY; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; TRANSPARENT ELECTRONICS; TRANSPARENT OXIDES; ZNO;

EID: 78650292845     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201001375     Document Type: Article
Times cited : (149)

References (52)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.