Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

  Lorenz, M ^a   Lajn, A ^a   Frenzel, H ^a   V Wenckstern, H ^a   Grundmann, M ^a   Barquinha, P ^b   Martins, R ^b   Fortunato, E ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; CHANNEL MOBILITY; ELECTRICAL PROPERTY; FUNCTIONAL PARTS; GATE SWEEP; INDIUM ZINC OXIDES; LOW TEMPERATURES; MESFET TECHNOLOGY; ROOM TEMPERATURE; SCHOTTKY; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SUBTHRESHOLD SWING;

AMORPHOUS FILMS; ELECTRIC PROPERTIES; INDIUM; MESFET DEVICES; OXIDE FILMS; ZINC;

FIELD EFFECT TRANSISTORS;

EID: 78650352232     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3525932     Document Type: Article

References (29)

1. R. A. Street, Adv. Mater. ADVMEW 0935-9648 21, 2007 (2009). 10.1002/adma.200803211
2. J. -J. Huang, C. -J. Liu, H. -C. Lin, C. -J. Tsai, Y. -P. Chen, G. -R. Hu, and C. -C. Lee, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 41, 245502 (2008). 10.1088/0022-3727/41/24/245502
3. H. Lee, G. Yoo, and J. Kanicki, J. Appl. Phys. JAPIAU 0021-8979 105, 124522 (2009). 10.1063/1.3153968
4. J. Singh, Phys. Rev. B PLRBAQ 0556-2805 23, 4156 (1981). 10.1103/PhysRevB.23.4156
5. H. Hosono, N. Kikuchi, N. Ueda, and H. Kawazoe, J. Non-Cryst. Solids JNCSBJ 0022-3093 198-200, 165 (1996). 10.1016/0022-3093(96)80019-6 (Pubitemid 126356031)
6. R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goņalves, and E. Fortunato, J. Appl. Phys. JAPIAU 0021-8979 101, 044505 (2007). 10.1063/1.2495754 (Pubitemid 46362963)
7. K. Nomura, H. Ohta, A. Tagaki, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
8. E. Fortunato, A. Pimentel, A. Goņalves, A. Marques, and R. Martins, Integration of Advanced Micro- and Nanoelectronic Devices-Critical Issues and Solutions, MRS Symposia Proceedings No. 811 (Materials Research Society, Pittsburgh, PA, 2004), p. E3.9.
9. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, and H. von Wenckstern, Phys. Status Solidi A PSSABA 0031-8965 207, 1437 (2010). 10.1002/pssa.200983771
10. P. Barquinha, L. Pereira, G. Goņalves, R. Martins, and E. Fortunato, J. Electrochem. Soc. JESOAN 0013-4651 156, H161 (2009). 10.1149/1.3049819
11. E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Goņalves, and R. Martins, Phys. Status Solidi (RRL) ZZZZZZ 1862-6254 1, R34 (2007). 10.1002/pssr.200600049 (Pubitemid 351175991)
12. H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. APPLAB 0003-6951 92, 192108 (2008). 10.1063/1.2926684 (Pubitemid 351713442)
13. H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. APPLAB 0003-6951 95, 153503 (2009). 10.1063/1.3242414
14. H. Frenzel, A. Lajn, H. von Wenckstern, and M. Grundmann, J. Appl. Phys. JAPIAU 0021-8979 107, 114515 (2010). 10.1063/1.3430988
15. C. R. Wronski, D. E. Carlson, and R. E. Daniel, Appl. Phys. Lett. APPLAB 0003-6951 29, 602 (1976). 10.1063/1.89158
16. M. Khaidar, A. Essafti, A. Bennouna, E. L. Ameziane, and M. Brunel, J. Appl. Phys. JAPIAU 0021-8979 65, 3248 (1989). 10.1063/1.342678
17. See Agilent 4156C PrecisionSemiconductor Parameter Analyzer, Usersguide: Measurement and Analysis http://cp.literature.agilent.com/litweb/pdf/04156- 90020.pdf.
18. M. W. Allen, S. M. Durbin, and J. B. Metson, Appl. Phys. Lett. APPLAB 0003-6951 91, 053512 (2007). 10.1063/1.2768028 (Pubitemid 47210867)
19. A. Lajn, H. v. Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, and R. Denecke, J. Vac. Sci. Technol. B JVTBD9 1071-1023 27, 1769 (2009). 10.1116/1.3086718
20. F. Balon and J. Shannon, Solid-State Electron. SSELA5 0038-1101 50, 378 (2006). 10.1016/j.sse.2005.12.020
21. M. Sahin, H. Durmus, and R. Kaplan, Appl. Surf. Sci. ASUSEE 0169-4332 252, 6269 (2006). 10.1016/j.apsusc.2005.08.034 (Pubitemid 44109737)
22. I. Ay and H. Tolunay, Solid-State Electron. SSELA5 0038-1101 51, 381 (2007). 10.1016/j.sse.2006.12.001 (Pubitemid 46497255)
23. Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films THSFAP 0040-6090 516, 5899 (2008). 10.1016/j.tsf.2007.10.051 (Pubitemid 351726028)
24. H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, and M. Grundmann, Appl. Phys. Lett. APPLAB 0003-6951 96, 113502 (2010). 10.1063/1.3339876
25. H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Z. Zhang, and M. Grundmann, " Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits.," Adv. Mater. ADVMEW 0935-9648 (2010). 10.1002/adma.201001375
26. M. Grundmann, The Physics of Semiconductors (Springer, Leipzig, 2006).
27. K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. APPLAB 0003-6951 93, 192107 (2008). 10.1063/1.3020714
28. A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. APPLAB 0003-6951 94, 133502 (2009). 10.1063/1.3112566
29. K. -B. Park, J. -B. Seon, G. H. Kim, M. Yang, B. Koo, H. J. Kim, M. -K. Ryu, and S. -Y. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 31, 311 (2010). 10.1109/LED.2010.2040130