Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts

Journal of Physics Condensed Matter

Volumn 21, Issue 33, 2009, Pages

  Mamor, M ^a  

^a SULTAN QABOOS UNIVERSITY   (Oman)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BARRIER HEIGHTS; CURRENT VOLTAGE; DISCRETE ENERGY LEVELS; GAP STATE; IDEAL BEHAVIOR; IDEALITY FACTORS; INHOMOGENEITIES; INTERFACE PARAMETERS; IV CHARACTERISTICS; LATERAL INHOMOGENEITY; METAL WORK FUNCTION; NATIVE DEFECT; NON-HOMOGENEOUS; NON-UNIFORM DISTRIBUTION; RESIDUAL DEFECTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; ZERO-BIAS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; PALLADIUM; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SURFACE DEFECTS; TEMPERATURE DISTRIBUTION;

SEMICONDUCTING GALLIUM;

EID: 70349139649     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/33/335802     Document Type: Article

References (54)

1. Morkoç H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
2. Jain S C, Willander M, Narayan J and Van Overstraeten R 2000 J. Appl. Phys. 87 965
3. Ambacher O 1998 J. Phys. D: Appl. Phys. 31 2653
4. Monemar B 1999 J. Mater. Sci.: Mater. Electron. 10 227
5. Spicer W E, Lindau I, Skeath P, Su C Y and Chye P 1980 Phys. Rev. Lett. 44 420
6. Cao R, Miyano K, Lindau I and Spicer W E 1989 Thin Solid Films 181 43
7. Tersoff J 1984 Phys. Rev. Lett. 52 465
8. Cowley A M and Sze S M 1965 J. Appl. Phys. 36 3212
9. Tracy K M, Hartlieb P J, Einfeldt S, Davis F R, Hurt E H and Nemanich R J 2003 J. Appl. Phys. 94 3939 and references therein
10. Lee M L, Sheu J K and Lin S W 2006 Appl. Phys. Lett. 88 032103
11. Wang L, Nathan M I, Lim T H, Khan M A and Chen Q 1996 Appl. Phys. Lett. 68 1267
12. Baranwal V, Kumar S, Pandey A C and Kanjilal D 2009 J. Alloys Compounds 480 962
13. Yu L S, Liu Q Z, Xing Q J, Qiao D J, Lau S S and Redwing J 1998 J. Appl. Phys. 84 2099 and references therein
14. Zhang H, Miller E J and Yu E T 2006 J. Appl. Phys. 99 023703
15. Iucolano F, Roccaforte F, Giannazzo F and Raineri V 2007 Appl. Phys. Lett. 90 092119
16. Iucolano F, Roccaforte F, Giannazzo F and Raineri V 2007 J. Appl. Phys. 102 13701
17. Wang L, Nathan M I, Lim T H, Khan M A and Chen Q 1996 Appl. Phys. Lett. 66 1267
18. Hacke P, Detchprohm T, Hiramatsu K and Sawaki N 1993 Appl. Phys. Lett. 63 2676
19. Ruvimov S, Liliental-Weber Z, Washburn J, Duxstad K J, Haller E E, Fan Z-F, Mohammed S N, Kim W, Botchkarev AE and Morkoç H 1996 Appl. Phys. Lett. 69 1556
20. Witowski A M, Pakuła K, Baranowski J M, Sadowski M L and Wyder P 1999 Appl. Phys. Lett. 75 4154
21. Werner J H 1988 Appl. Phys. A 47 291
22. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
23. Rhoderick E H and Williams R H 1988 Metal Semiconductor Contacts (Oxford: Clarendon)
24. Chattopadhyar P and Daw A N 1986 Solid State Electron. 29 555
25. Türüt A 1995 Physics B 205 41
26. Card H C and Rhoderick E H 1971 J. Phys. D: Appl. Phys. 4 1589
27. Mamor M, Matias V, Vantomme A, Colder A, Marie P and Ruterana P 2004 Appl. Phys. Lett. 85 2244
28. Götz W, Johnson N M, Amano H and Akasaki I 1994 Appl. Phys. Lett. 65 463
29. Goodman S A, Auret F D, Legodi M J, Beaumont B and Gibart P 2001 Appl. Phys. Lett. 78 3815
30. Hacke P, Detchprohm T, Hiramatsu K, Sawaki N, Tadatomo K and Miyake K 1994 J. Appl. Phys. 76 304
31. Auret F D, Goodman S A, Koschnick F K, Spaeth J M, Beaumont B and Gibart P 1999 Appl. Phys. Lett. 74 407
32. Mamor M and Sellai A 2008 J. Vac. Sci. Technol. A 26 705
33. Sellai A, Mamor M and Al-Harthi S 2007 Surf. Rev. Lett. 14 765
34. Guo J D, Feng M S, Guo R J, Pan F M and Chang C Y 1995 Appl. Phys. Lett. 67 2657
35. Binari S C, Dietrich H B, Kelner G, Rowland L B, Doverspike K and Gaskill D K 1994 Electron. Lett. 30 909
36. Kribes Y, Harrison I, Tuck B, Cheng T S and Foxon C T 1997 Semicond. Sci. Technol. 12 913
37. Foresi J S and Moustakas T D 1993 Appl. Phys. Lett. 62 2859
38. Kurtin S, McGill T C and Mead C A 1969 Phys. Rev. Lett. 22 1433
39. Liu Q Z and Lau S S 1998 Solid State Electron. 42 677
40. Hirsch M T, Duxstad K J and Haller E E 1997 Electron. Lett. 33 3108
41. Kalinina E V, Kuznetsov N I, Dmitriev V A, Irvine K G and Carter C H 1995 J. Electron. Mater. 25 831
42. Schmitz A C, Ping A T, Khan M A, Chen Q, Yang J W and Adesida I 1996 Semicond. Sci. Technol. 11 1464
43. Iucolano F, Roccaforte F, Giannazzo F and Raineri V 2008 J. Appl. Phys. 104 093706
44. Picozzi S, Continenza A, Satta G, Massidda S and Freeman AJ 2000 Phys. Rev. B 61 16736
45. Roccaforte F, La Via F, Raineri V, Pierobon R and Zanoni E 2003 J. Appl. Phys. 93 9137
46. Zhu S, Van Meirhaeghe R L, Detavernier C, Cardon F, Forment S, Ru G P, Qu X P and Li B Z 2000 Solid-State Electron. 44 663
47. Werner J H and Güttler H H 1991 J. Appl. Phys. 69 1522
48. Tung R T 1992 Phys. Rev. B 45 13509
49. Jiang Y L, Ru G P, Lu F, Qu X P, Li B Z and Yang S 2003 J. Appl. Phys. 93 866
50. Vanalme G M, Goubert L, Van Meirhaeghe R L, Cardon F and van Daele P 1999 Semicond. Sci. Technol. 14 871
51. Missous M and Rhoderick E H 1991 J. Appl. Phys. 69 7142
52. Akkiliç K, Türüt A, ankaya G and Kiliçolu T 2003 Solid State Commun. 129 551
53. Schmitsdorf R F, Kampen T U and Mönch W 1995 Surf. Sci. 324 249
54. Mamor M, Sellai A, Bouziane K, Al Harthi S, Al Bousaidi M and Gard F S 2007 J. Phys. D: Appl. Phys. 40 1351