Analysis of a conducting channel at the native zinc oxide surface

Superlattices and Microstructures

Volumn 39, Issue 1-4, 2006, Pages 8-16

  Schmidt, Oliver ^a   Geis, Arnd ^a   Kiesel, Peter ^a   Van De Walle, Chris G ^a,b   Johnson, Noble M ^a   Bakin, Andrey ^c   Waag, Andreas ^c   Döhler, Gottfried H ^d  

^a PALO ALTO RESEARCH CENTER   (United States)

^b University of California   (United States)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; MOS DEVICES; PASSIVATION; VACUUM;

CONDUCTING CHANNEL; CONDUCTING ELECTRON CHANNEL; HIGH BULK RESISTIVITY; SURFACE PASSIVATION LAYERS;

ZINC OXIDE;

EID: 29344440493     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.08.056     Document Type: Article

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