Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 245-250

  Gumus A ^a   Turut A ^a   Yalcin N ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; FLAT BAND; GAAS; GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; IDEALITY FACTORS; INHOMOGENEITIES; LOW TEMPERATURES; NON-LINEARITY; SCHOTTKY CONTACTS; STANDARD DEVIATION; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; TEMPERATURE RANGE; ZERO-BIAS;

ACTIVATION ENERGY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GAUSSIAN DISTRIBUTION; INTERFACES (MATERIALS); MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 0036139309     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1424054     Document Type: Article

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