Electrical characteristics of Pt Schottky contacts fabricated on amorphous gallium indium zinc oxides

Japanese Journal of Applied Physics

Volumn 50, Issue 10 PART 1, 2011, Pages

  Kim, Hyunsoo ^a   Kim, Seongjun ^a   Kim, Kyoung Kook ^a,b   Lee, Sung Nam ^a,b   Ahn, Kwang Soon ^a,c  

^a Chonbuk National University   (South Korea)

^b Korea Polytechnic University   (South Korea)

^c Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CONDUCTION BAND EDGE; ELECTRICAL CHARACTERISTIC; GALLIUM INDIUM ZINC OXIDES; HOPPING CONDUCTION; IDEALITY FACTORS; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; STANDARD DEVIATION; STATISTICAL POTENTIAL;

ELECTRON MOBILITY; GALLIUM; INDIUM; PLATINUM; SCHOTTKY BARRIER DIODES; SOLVENTS; THERMIONIC EMISSION; ZINC; ZINC OXIDE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 80054928190     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.105702     Document Type: Article

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