A physics-based predictive modeling framework for dielectric charging and creep in RF MEMS capacitive switches and varactors

Journal of Microelectromechanical Systems

Volumn 21, Issue 2, 2012, Pages 420-430

  Jain, Ankit ^a   Palit, Sambit ^a   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Capacitance; creep; electrostatic actuators; microelectromechanical systems; reliability; switches; varactors

Indexed keywords

AC BIAS; BULK TRAPS; CAPACITANCE CHANGE; CAPACITIVE SWITCH; DEGRADATION MECHANISM; DEVICE LIFETIME; DIELECTRIC CHARGING; EULER-BERNOULLI; IMPACT VELOCITIES; MEMS SWITCHES; NEW MODEL; PARAMETRIC DEGRADATION; PERFORMANCE METRICS; PHYSICS-BASED; PREDICTIVE MODELING; PULL-IN; PULL-IN/PULL-OUT VOLTAGE; RELIABILITY AWARE DESIGN; RF MEMS CAPACITIVE SWITCHES; RF MICROELECTROMECHANICAL SYSTEMS; THEORETICAL MODELING; THEORETICAL MODELS; TIME-DEPENDENT;

CAPACITANCE; CREEP; DEGRADATION; ELECTRIC SWITCHES; ELECTROMECHANICAL DEVICES; ELECTROSTATIC ACTUATORS; FORECASTING; MEMS; RELIABILITY; SWITCHES; VISCOELASTICITY;

VARACTORS;

EID: 84859724620     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2011.2174418     Document Type: Article

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