메뉴 건너뛰기




Volumn , Issue , 2006, Pages 47-50

Temperature acceleration of dielectric charging in RF MEMS capacitive switches

Author keywords

Charging; Dielectric; MEMS; RF; Switch; Temperature acceleration; Trap

Indexed keywords

DIELECTRIC CHARGING; DISCHARGING TRANSIENT; RF SWITCHES; TEMPERATURE ACCELERATION;

EID: 33845528032     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249923     Document Type: Conference Paper
Times cited : (30)

References (7)
  • 2
    • 33646069253 scopus 로고    scopus 로고
    • Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches
    • June
    • X. Yuan, J. C. M. Hwang, D. Forehand, and C. L. Goldsmith, "Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches," in IEEE MTT-S Int. Microwave Symp. Dig., June 2005, pp. 753-756
    • (2005) IEEE MTT-S Int. Microwave Symp. Dig , pp. 753-756
    • Yuan, X.1    Hwang, J.C.M.2    Forehand, D.3    Goldsmith, C.L.4
  • 3
    • 0037153503 scopus 로고    scopus 로고
    • Measurements of charging in capacitive microelectromechanical switches
    • Nov
    • J. R. Reid and R. T. Webster, "Measurements of charging in capacitive microelectromechanical switches," Electron. Lett., vol. 38, no. 24, pp. 1544-1545, Nov. 2002.
    • (2002) Electron. Lett , vol.38 , Issue.24 , pp. 1544-1545
    • Reid, J.R.1    Webster, R.T.2
  • 4
    • 2342642163 scopus 로고    scopus 로고
    • A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches
    • Jan
    • W. M. van Spengen, R. Puers, R. Mertens, and I. De Wolf, "A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches," J. Micromech. Microeng., vol. 14, no. 4, pp. 514-521, Jan. 2004.
    • (2004) J. Micromech. Microeng , vol.14 , Issue.4 , pp. 514-521
    • van Spengen, W.M.1    Puers, R.2    Mertens, R.3    De Wolf, I.4
  • 6
    • 21544438388 scopus 로고
    • Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors
    • Sep
    • M. J. Powell, "Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors," Appl. Phys. Lett., vol. 43, pp. 597-599, Sep. 1983.
    • (1983) Appl. Phys. Lett , vol.43 , pp. 597-599
    • Powell, M.J.1
  • 7
    • 0000348108 scopus 로고
    • Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?
    • Sep
    • A. V. Gelatos and J. Kanicki, "Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?" Appl. Phys. Lett., vol. 57, pp. 1197-1199, Sep. 1990.
    • (1990) Appl. Phys. Lett , vol.57 , pp. 1197-1199
    • Gelatos, A.V.1    Kanicki, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.