Charge transport mechanism in metal-nitride-oxide-silicon structures

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 336-338

  Nasyrov, K A ^a   Gritsenko, V A ^b   Kim, M K ^c   Chae, H S ^c   Chae, S D ^c   Ryu, W I ^c   Sok, J H ^c   Lee, J W ^c   Kim, B M ^c  

^a INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Dielectric materials; EEPROM; MNOS devices; Silicon nitride; Trap

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ELECTRON TUNNELING; IONIZATION; OXIDES; PHONONS; PHOTOLITHOGRAPHY; SILICON NITRIDE;

CHARGE TRANSPORT; FRENKEL EFFECT; METAL NITRIDE OXIDE SILICON STRUCTURES; MULTIPHONON PROCESS; PHONON ASSISTED IONIZATION; THERMALLY ASSISTED TUNNELING;

DIELECTRIC MATERIALS;

EID: 0036610044     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004227     Document Type: Letter

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