Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic-layer-deposited HfO2 films

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Jeong, Doo Seok ^a   Park, Hong Bae ^a,b   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRON INJECTION; OXIDANTS; POOLE-FRENKEL CONDUCTION;

DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; FILM GROWTH; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; QUANTUM THEORY;

DIELECTRIC FILMS;

EID: 17044426365     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1865326     Document Type: Article

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