Time and voltage dependence of dielectric charging in RF MEMS capacitive switches

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 417-421

  Herfst, R W ^a   Steeneken, P G ^a   Schmitz, J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Capacitive switch; Charging; Dielectric; Reliability; RF MEMS; Silicon nitride

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; MEMS; RELIABILITY ANALYSIS; SILICON NITRIDE;

CAPACITIVE SWITCHES; DIELECTRIC CHARGING; NXP SEMICONDUCTORS; STRESS VOLTAGE;

SEMICONDUCTOR SWITCHES;

EID: 34548710326     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369926     Document Type: Conference Paper

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