Confinement-induced carrier mobility increase in nanowires by quantization of warped bands

Solid-State Electronics

Volumn 70, Issue , 2012, Pages 81-91

  Neophytou, Neophytos ^a   Kosina, Hans ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Anisotropy; Atomistic; Bandstructure; Boltzmann; Mobility; Silicon nanowire; sp 3d 5s * Tight binding model; Ultra thin body; Warped bands

Indexed keywords

ATOMISTIC; BOLTZMANN; SILICON NANOWIRE; ULTRA-THIN-BODY; WARPED BANDS;

ANISOTROPY; BAND STRUCTURE; ELECTRONIC STRUCTURE; NANOWIRES; PHONONS; STATISTICAL MECHANICS; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

CARRIER MOBILITY;

EID: 84858080101     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.11.018     Document Type: Conference Paper

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