Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon

Nano Letters

Volumn 8, Issue 2, 2008, Pages 760-765

  Buin, A K ^a   Verma, A ^b   Svizhenko, A ^c   Anantram, M P ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b TEXAS A AND M UNIVERSITY   (United States)

^c Silvaco Data Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; SILICON NANOWIRES;

BAND STRUCTURE; ELECTRONIC EQUIPMENT; ELECTRONS; NANOWIRES; SILICON;

HOLE MOBILITY;

NANOMATERIAL; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON; ELECTRON TRANSPORT; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; ELECTRONS; MODELS, CHEMICAL; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON;

EID: 40449141378     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0727314     Document Type: Article

References (36)

1. Zhao, X.; Wei, C. M.; Yang, L.; Chou, M. Y. Phys. Rev. Lett. 2004, 92, 236805.
2. Zhao, Y.; Yakobson, B. I. Phys. Rev. Lett. 2003, 91, 035501.
3. Rivas, C.; Lake, R. Proc. NanoTech 2003, 2, 137.
4. Svizhenko, A.; Leu, P. W.; Cho, K. Phys. Rev. B 2007, 75, 125417.
5. Leao, C. R.; Fazzio, A.; Silva, J. R. Nano Lett. 2007, 7, 1172.
6. Svizhenko, A.; Bandyopadhyay, S.; Stroscio, M. A. J. Phys: Condens. Matter 1998, 10, 6091.
7. Ramaya, E.; Vasileska, D.; Goodnick, S. M.; Knezevic, I. J. Phys: Conference Series 2006, 38, 126.
8. Fonoberov, V. A.; Balandin, A. A. Nano Lett. 2006, 6, 2442.
9. Koo, S. M.; Fujiwara, A.; Han, J. P.; Vogel, E. M.; Richter, C. A.; Bonevich, J. E. Nano Lett. 2004, 4, 2197.
10. Mickevičius, R.; Mitin, V. Phys. Rev. B 1993, 48, 17194.
11. Ridley, B. K. Electrons and phonons in Semiconductor Multilayers, Cambridge studies in Semiconductor Physics and Microelectronic Engineering; Cambridge University Press: 1997.
12. Nishiguchi, N. Phys. Rev. B 1996, 54, 1494.
13. Bockelmann, U.; Bastard, G. Phys. Rev. B 1990, 42, 8947.
14. Yu, S.; Kim, K. W.; Stroscio, M. A.; Iafarte, G. J.; Ballato, A. Phys. Rev. B 1994, 50, 1733.
15. Stroscio, M. A.; Dutta, M. Phonons in Nanostructures; Cambdridge University Press: 2005.
16. Kotlyar, R.; Obradovic, B.; Matagne, P.; Stettler, M.; Giles, M. D. Appl. Phys. Lett. 2004, 84, 5270.
17. Sanders, G. D.; Stanton, C. J.; Chang, Y. C. Phys. Rev. B 1993, 48, 11067.
18. Cui, Y.; Zhong, Z.; Wang, D.; Wang, W. U.; Lieber, C. M. Nano Lett. 2003, 3, 149.
19. Hepplestone, S. P.; Srivastava, G. P. Nanotechnology 2006, 17, 3288.
20. Thonhauser, T.; Mahan, G. D. Phys. Rev. B 2004, 69, 075213.
21. Mingo, N. Phys. Rev. B 2003, 68, 113308.
22. Jancu, J. M.; Scholz, R.; Beltram, F.; Bassani, F. Phys. Rev. B 1998, 57, 6493.
23. Zheng, Y.; Rivas, C.; Lake, R.; Alam, K.; Boykin, T. B.; Klimeck, G. IEEE Trans. Electron. DeVices 2005, 52, 1097.
24. Löwdin, P. O. J. Chem. Phys. 1950, 18, 365.
25. Martin, R. M. Electronic Structure, Basic theory and practical methods; Cambridge University Press: 2004.
26. Royer, D.; Dieulesaint, E. Elastic waVes in solids I: Free and guided propagation; Springer: 2000.
27. Tanatar, B. Phys. Rev. B 1993, 48, 12001.
28. Bannov, N.; Aristov, V.; Mitin, V.; Stroscio, M. A. Phys. Rev. B 1995, 51, 9930.
29. Lundstrom, M. Fundamentals of carrier transport, 2nd ed.; Cambridge University Press: 2000.
30. Stroscio, M. A.; Kim, K. W.; Yu, S.; Ballato, A. J. Appl. Phys. 1994, 76, 4670.
31. Pop, E.; Dutton, R. W.; Goodson, K. E. J. Appl. Phys. 2004, 96, 4998.
32. Rössler, U. Solid state theory; Springer, 2004.
33. Ottaviani, G.; Reggiani, L.; Canali, C.; Nava, F.; Alberigi-Quaranta, A. Phys. Rev. B 1975, 12, 3318.
34. Fischetti, M. V.; Laux, S. E. J. Appl. Phys. 1996, 80, 2234.
35. Sanders, G. D.; Chang, Y. C. Phys. Rev. B 1992, 45, 9202.
36. Wu, Y.; Cui, Y.; Huynh, L.; Barrelet, C. J.; Bell, D. C.; Lieber, C. M. Nano Lett. 2004, 4, 433.