Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 92, Issue 5, 2008, Pages

  Cho, K H ^a   Yeo, K H ^a   Yeoh, Y Y ^a   Suk, S D ^a   Li, M ^a   Lee, J M ^a   Kim, M S ^a   Kim, D W ^a   Park, D ^a   Hong, B H ^b   Jung, Y C ^b   Hwang, S W ^b  

^a SAMSUNG Electronics   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); NANOWIRES; SILICON; TRANSCONDUCTANCE;

BALLISTIC TRANSPORT; CHANNEL LENGTH;

MOSFET DEVICES;

EID: 38949130708     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2840187     Document Type: Article

References (12)

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