Experimental study on superior mobility in (110)-oriented UTB SOI pMOSFETs

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 836-838

  Tsutsui, Gen ^a   Saitoh, Masumi ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

(110); Hole mobility; Quantum confinement effect; Subband modulation; Ultrathin body (UTB) SOI MOSFET

Indexed keywords

CARRIER CONCENTRATION; ELECTRON SCATTERING; HOLE MOBILITY; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON SAPPHIRE TECHNOLOGY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM CONFINEMENT EFFECT; SUB-BAND MODULATION; SUPERIOR MOBILITY; ULTRATHIN-BODY MOSFET;

MOSFET DEVICES;

EID: 27744592434     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857725     Document Type: Article

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