Carrier-phonon interaction in small cross-sectional silicon nanowires

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Buin, A K ^a   Verma, A ^b   Anantram, M P ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b TEXAS A AND M UNIVERSITY KINGSVILLE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; FLOW INTERACTIONS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; PERTURBATION TECHNIQUES; PHONONS; SILICON;

CARRIER-PHONON INTERACTION; CRYSTALLOGRAPHIC AXIS; DEFORMATION POTENTIAL APPROXIMATION; ELECTRONIC BAND STRUCTURES; FIRST-ORDER PERTURBATION THEORY; OPTICAL PHONONS; SILICON NANOWIRES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51849105118     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2974088     Document Type: Article

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