Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass

Nano Letters

Volumn 9, Issue 2, 2009, Pages 623-630

  Neophytou, Neophytos ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN SPACES; FULL BANDS; HEIGHT VARIATIONS; LINE-WIDTH CONTROLS; LOW SENSITIVITIES; NANOWIRE DEVICES; ON CURRENTS; QUANTIZATION BEHAVIORS; SEMI-EMPIRICAL; SIZE VARIATIONS; SPIN ORBITS; STRAIN ENGINEERINGS; TIGHT-BINDING MODELS; VARIATION MECHANISMS; VOLUME INVERSIONS;

ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; NANOWIRES; SURFACE ROUGHNESS;

SENSITIVITY ANALYSIS;

EID: 65249159024     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/n1802893m     Document Type: Article

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