Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis

Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

  Neophytou, Neophytos ^a   Klimeck, Gerhard ^b   Kosina, Hans ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC ANALYSIS; BALLISTIC MODEL; CARRIER VELOCITY; CHANNEL MATERIALS; COMPREHENSIVE STUDIES; DEGREES OF FREEDOM; LAYER THICKNESS; LENGTH SCALE; MOBILITY MEASUREMENTS; ON-CURRENTS; OPTOELECTRONIC APPLICATIONS; P-TYPE; P-TYPE SILICON; SPIN ORBITS; SUB-BANDS; SURFACE CHANNEL; SURFACE ORIENTATION; TIGHT BINDING MODEL; TRANSPORT DIRECTION; ULTRA-THIN-BODY; ULTRATHIN LAYERS; VELOCITY ENHANCEMENT;

BALLISTICS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; SURFACES;

VELOCITY;

EID: 79953014492     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3556435     Document Type: Article

References (38)

1. ITRS Public Home Page, available at http://www.itrs.net/reports.html.
2. L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 47, 16631 (1993). 10.1103/PhysRevB.47.16631
3. S.-M. Lee, D. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). 10.1063/1.118755
4. R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O'Quinn, Nature 413, 597 (2001). 10.1038/35098012 (Pubitemid 32964053)
5. A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, and P. Yang, Nature 451, 163 (2008). 10.1038/nature06381
6. A. I. Boukai, Y. Bunimovich, J. T. -Kheli, J.-K. Yu, W. A. Goddard III, and J. R. Heath, Nature 451, 168 (2008). 10.1038/nature06458
7. C. B. Winkelmann, I. Ionica, X. Chevalier, G. Royal, C. Bucher, and V. Bouchiat, Nano Lett. 7, 1454 (2007). 10.1021/nl0630485 (Pubitemid 47140405)
8. M. Law, L. E. Greene, J. C. Johnson, R. Saykally, and P. Yang, Nat. Mater. 4, 455 (2005). 10.1038/nmat1387 (Pubitemid 40774050)
9. S. Huang and Y. Chen, Nano Lett. 8, 2829 (2008). 10.1021/nl801429p
10. P. R. Nair and M. A. Alam, Appl. Phys. Lett. 88, 233121 (2006). 10.1063/1.2211310 (Pubitemid 43877772)
11. Y. Liu, N. Neophytou, T. Low, G. Klimeck, and M. S. Lundstrom, IEEE Trans. Elect. Dev. 55, 866 (2008). 10.1109/TED.2007.915056 (Pubitemid 351404546)
12. M. Yang, V. W. C. Chan, K. K. Chan, L. Shi, D. M. Fried, J. H. Stathis, A. I. Chou, E. Gusev, J. A. Ott, L. E. Burns, M. V. Fischetti, and M. Ieong, IEEE Trans. Electr. Dev. 53, 965 (2006). 10.1109/TED.2006.872693
13. M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, J. Appl. Phys. 94, (2003). 10.1063/1.1585120
14. Y.-T. Huang, A. Pinto, C.-T. Lin, C.-H. Hsu, M. Ramin, M. Seacrist, M. Ries, K. Matthews, B. Nguyen, M. Freeman, B. Wilks, C. Stager, C. Johnson, L. Denning, J. Bennett, S. Joshi, S. Chiang, L.-W. Cheng, T.-H. Lee, M. Ma., O. Cheng, R. Wise., IEEE Electr. Dev. Lett. 28, no. 9, pp. 815-817 (2007). 10.1109/LED.2007.902613
15. N. Neophytou, S. G. Kim, G. Klimeck, and H. Kosina, J. Appl. Phys. 107, 113701 (2010). 10.1063/1.3372764
16. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967). 10.1103/PhysRev.163.816
17. A. Rahman, M. S. Lundstrom, and A. W. Ghosh, J. Appl. Phys. 97, 053702 (2005). 10.1063/1.1845586 (Pubitemid 40818239)
18. N. Neophytou, A. Paul, and G. Klimeck, IEEE Trans. Nanotechnol. 7, 710 (2008). 10.1109/TNANO.2008.2006272
19. N. Neophytou and G. Klimeck, Nano Lett. 9, 623 (2009). 10.1021/nl802893m
20. M. Luisier and G. Klimeck, in 8th IEEE Conference on Nanotechnology, 2008. NANO'08, 18-21 Aug. 2008, (IEEE New York, 2008) pp. 354-357.
21. A. Paul, S. Mehrotra, M. Luisier and G. Klimeck, IEEE Elect. Dev. Lett. 31, 278 (2010). 10.1109/LED.2010.2040577
22. M. Shin, S. Lee, and G. Klimeck, IEEE Trans. Elect. Dev. 57, 2274 (2010). 10.1109/TED.2010.2052400
23. T. B. Boykin, G. Klimeck, and F. Oyafuso, Phys. Rev. B 69, 115201 (2004). 10.1103/PhysRevB.69.115201
24. G. Klimeck, S. Ahmed, H. Bae, N. Kharche, S. Clark, B. Haley, S. Lee, M. Naumov, H. Ryu, F. Saied, M. Prada, M. Korkusinski, and T. B. Boykin, IEEE Trans. Electr. Dev. 54, 2079 (2007). 10.1109/TED.2007.902879 (Pubitemid 351485729)
25. N. Neophytou, A. Paul, M. Lundstrom, and G. Klimeck, IEEE Trans. Elect. Dev. 55, 1286 (2008). 10.1109/TED.2008.920233 (Pubitemid 351803228)
26. M. S. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation, (Springer New York, 2006).
27. A. Rahman, J. Guo, S. Datta, and M. Lundstrom, IEEE Trans. Electr. Dev. 50, 1853 (2003). 10.1109/TED.2003.815366
28. L. Chang, M. Ieong, and M. Yang, IEEE Trans. Electr. Dev. 51, 1621 (2004). 10.1109/TED.2004.834912
29. J. Wang, Ph.D. dissertation, Purdue University, 2005.
30. N. Kharche, M. Prada, T. B. Boykin, and G. Klimeck, Appl. Phys. Lett. 90, 092109 (2007). 10.1063/1.2591432 (Pubitemid 46355711)
31. R. Rahman, C. J. Wellard, F. R. Bradbury, M. Prada, J. H. Cole, G. Klimeck, and L. C. L. Hollenberg, Phys. Rev. Lett. 99, 036403 (2007). 10.1103/PhysRevLett.99.036403 (Pubitemid 47168663)
32. K. Natori, J. Appl. Phys. 76, 4879 (1994). 10.1063/1.357263
33. A. K. Buin, A. Verma, A. Svizhenko, and M. P. Anantram, Nano Lett. 8, 760 (2008). 10.1021/nl0727314 (Pubitemid 351346053)
34. N. Neophytou, and H. Kosina, Nano Lett. 10, 4913 (2010). 10.1021/nl102875k
35. S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C.-H. Jan, C. Kenyon, J. Klaus, K. Kuhn, M. Zhiyong, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, N. Phi, S. Sivakumar, R. Shaheed, L. Shifren, B. Tufts, S. Tyagi, M. Bohr, Y. El-Mansy, IEEE Trans. Electr. Dev. 51, 1790 (2004). 10.1109/TED.2004.836648
36. K. Uchida and S. Takagi, IEEE Appl. Phys. Lett. 82, 2916 (2003). 10.1063/1.1571227
37. N. Neophytou, A. Paul, M. Lundstrom, and G. Klimeck, Proc. Simul. Semicond. Processes Devices. 12, 217 (2007). 10.1007/978-3-211-72861-1-51
38. Bandstructure lab on nanoHUB.org, available at https://www.nanohub.org/ tools/bandstrlab/.