Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2079-2089

  Klimeck, Gerhard ^a,b   Ahmed, Shaukh Shahid ^a   Bae, Hansang ^a   Clark, Steve ^c   Haley, Benjamin ^a   Lee, Sunhee ^a   Naumov, Maxim ^c   Ryu, Hoon ^a   Saied, Faisal ^c   Prada, Marta ^a   Korkusinski, Marek ^d   Boykin, Timothy B ^e   Rahman, Rajib ^a  

^a PURDUE UNIVERSITY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c Purdue University   (United States)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

3 D NanoElectronic MOdeling (NEMO 3 D); Atomistic simulation; Keating model; Nanostructures; Piezoelectricity; Quantum computation; Strain; Tight binding; Valley splitting

Indexed keywords

COMPUTER SIMULATION; ELECTRON DEVICES; MATHEMATICAL MODELS; OPTIMIZATION; QUANTUM THEORY; SEMICONDUCTOR DEVICES; THREE DIMENSIONAL;

ATOMISTIC SIMULATION; NANODEVICES; NANOELECTRONIC MODELING; NANOSTRUCTURED SEMICONDUCTORS;

NANOELECTRONICS;

EID: 41749098089     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902879     Document Type: Article

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