Analysis of thermoelectric properties of scaled silicon nanowires using an atomistic tight-binding model

Journal of Electronic Materials

Volumn 39, Issue 9, 2010, Pages 1902-1908

  Neophytou, Neophytos ^a   Wagner, Martin ^b   Kosina, Hans ^a   Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b O Flexx Technologies GmbH   (Germany)

Author keywords

atomistic; conductivity; Landauer; nanowire; Seebeck coefficient; silicon; sp 3d 5s*; Thermoelectric; tight binding; ZT

Indexed keywords

ATOMISTIC; CONDUCTIVITY; LANDAUER; SEEBECK; THERMOELECTRIC; TIGHT BINDING; ZT;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRONIC STRUCTURE; NANOWIRES; SEEBECK COEFFICIENT; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT;

ELECTRIC WIRE;

EID: 77956231369     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-1035-5     Document Type: Article

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