Hole mobility characteristics in si nanowire pMOSFETs on (110) silicon-on-insulator

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1181-1183

  Chen, Jiezhi ^a,b   Saraya, Takuya ^b   Hiramoto, Toshiro ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

(110) silicon on insulator (SOI); Gate all around (GAA) nanowire; hole mobility; Si; split C V method

Indexed keywords

APPLIED STRESS; C-V METHOD; GATE-ALL-AROUND; MOBILITY CHARACTERISTICS; ORIENTED SILICON; P-MOSFETS; PHYSICAL MECHANISM; RECTANGULAR SHAPES; SI; SI NANOWIRE; SILICON ON INSULATOR; SILICON-ON-INSULATORS; UNIAXIAL STRESS;

GALLIUM ALLOYS; NANOWIRES; SILICON;

HOLE MOBILITY;

EID: 78049318005     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2064154     Document Type: Article

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