Performance analysis of a Ge/Si core/shell nanowire field-effect transistor

Nano Letters

Volumn 7, Issue 3, 2007, Pages 642-646

  Liang, Gengchiau ^a,d   Xiang, Jie ^b   Kharche, Neerav ^a   Klimeck, Gerhard ^a   Lieber, Charles M ^b,c   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c HARVARD UNIVERSITY   (United States)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC LIMITS; BALLISTIC TRANSPORT MODEL; NANOWIRE TRANSISTORS; TIGHT BINDING TREATMENT;

BALLISTICS; ELECTRONIC STRUCTURE; NANOWIRES; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 34047133474     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062596f     Document Type: Article

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