Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Kharche, Neerav ^a,b   Prada, Marta ^e   Boykin, Timothy B ^c   Klimeck, Gerhard ^a,b,d  

^a PURDUE UNIVERSITY   (United States)

^b Purdue University   (United States)

^c UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC STRUCTURE; GERMANIUM ALLOYS; MAGNETIC FIELDS; SILICON ALLOYS; VALENCE BANDS;

ALLOY DISORDERS; FLAT STRUCTURES; SILICON QUANTUM WELLS; VALLEY SPLITTING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33847643167     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2591432     Document Type: Article

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